JAN2N2369A

Name: JAN2N2369A
Brand: Microchip Technology
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Transistor NPN Bipolar Junction 15V 360mW TO-18 3-Pin

8,886 Effective Inventory

JAN2N2369A

Effective Inventory8,886

Transistor NPN Bipolar Junction 15V 360mW TO-18 3-Pin

Manufacturer Part # : JAN2N2369A
Package/Case: TO-18-3
Part Status : ACTIVE
Brand: Microchip Technology
Product Categories : Single Bipolar Transistors
Series : 2N2369

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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JAN2N2369A DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$11.233	$11.23
200	$4.482	$896.40
500	$4.332	$2,166.00
1000	$4.258	$4,258.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Rapid Quote

Please submit RFQ for JAN2N2369A or email to us: Email: [email protected], we will contact you in 12 hours.

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JAN2N2369A Description

The JAN2N2369A is a high-speed silicon NPN transistor used in electronic circuits, particularly suitable for amplifier applications due to its low noise and high gain characteristics.

Features

PNP Silicon Transistor: The JAN2N2369A is a PNP silicon transistor suitable for various electronic applications.
Low Noise Amplifier Applications: Its low noise and high gain characteristics make it ideal for amplifier circuit designs.
High Gain, Low Power Dissipation: The JAN2N2369A provides good performance in terms of gain while minimizing power consumption.
Fast Switching Speed: This feature enables the transistor to handle high-speed switching applications efficiently.
Complementary NPN Type Available (2N2369): A complementary NPN type is also available for matching pair purposes.
Operating Temperature Range: -65°C to +200°C: The transistor operates within a wide temperature range making it suitable for various environmental conditions.

Application

The JAN2N2369A is commonly used in amplifier circuits, oscillators, switching circuits, radio frequency (RF) applications, high-frequency transistors, audio amplifiers, and sensor circuits due to its high gain, low noise, and fast switching speed characteristics.

Where to Use:

Audio Amplifiers
Radar Systems
Sensor Circuits
Automotive Electronics
Industrial Control Systems
Communications Equipment

Manufacturer

The JAN2N2369A is manufactured by Semicoa Semiconductors, a leading global semiconductor company.

This transistor was developed to meet the growing demand for high-speed, low-noise amplification in various electronic applications, particularly in industrial control systems, automotive electronics, and communications equipment.

Packages

The JAN2N2369A comes in a TO-18 package, making it suitable for surface-mount technology and efficient integration into electronic circuits.

Equivalent Parts of JAN2N2369A

2N3553: A comparable PNP silicon transistor with similar features and performance characteristics.

FAQ

Q: What is the operating temperature range of the JAN2N2369A?
A: It operates within a wide temperature range of -65°C to +200°C, making it suitable for various environmental conditions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	Bipolar Transistors - BJT	RoHS	N
Mounting Style	Through Hole	Package / Case	TO-18-3
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	15 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	4.5 V	Collector-Emitter Saturation Voltage	200 mV
Maximum DC Collector Current	100 mA	Pd - Power Dissipation	360 mW
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature !	+ 200 C
Brand	Microchip / Microsemi	DC Collector/Base Gain hfe Min	40 at 10 mA, 350 VDC
DC Current Gain hFE Max	120 at 10 mA, 350 VDC	Product Type !	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si	Unit Weight	0.068711 oz