JAN2N2222A
Lead-free and RoHS compliant NPN transistor suitable for various electronic applicationsJAN2N2222A
Lead-free and RoHS compliant NPN transistor suitable for various electronic applications
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Manufacturer Part # : JAN2N2222A
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Package/Case: TO18-3
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Brand: Onsemi
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Product Categories : Single Bipolar Transistors
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Series : 2N2222
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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JAN2N2222A DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
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1 | $7.196 | $7.20 |
10 | $7.038 | $70.38 |
30 | $6.932 | $207.96 |
100 | $6.827 | $682.70 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
JAN2N2222A Details
The JAN2N2222A is a high-performance NPN bipolar junction transistor (BJT) from Fairchild Semiconductor, designed for general-purpose amplifier and switching applications. This device features a high current capability of 600mA, low voltage rating of 40V, and low power dissipation of 500mW, making it suitable for a wide range of applications.
Pinout
- 1 (B): Base
- 2 (C): Collector
- 3 (E): Emitter
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Current Capability: Handles high currents of up to 600mA for demanding applications.
- Low Voltage Rating: Operates safely within a voltage range of 40V, reducing the risk of damage or malfunction.
- Low Power Dissipation: Designed for low power consumption of 500mW, making it suitable for battery-powered devices and energy-efficient systems.
- Fast Switching Speeds: Features fast switching speeds for efficient operation in high-frequency applications.
Applications
The JAN2N2222A is suitable for a wide range of general-purpose amplifier and switching applications, including:
- Audio amplifiers
- Power supplies
- Motor control circuits
- Switch-mode power converters
Where to Use
The JAN2N2222A is suitable for use in various applications, including:
- Industrial control systems
- Aerospace and defense systems
- Automotive electronics
- Consumer appliances
How to Use
To use the JAN2N2222A, follow these steps:
- Connect the base (B) to a suitable voltage source.
- Connect the collector (C) to the positive supply rail or load.
- Connect the emitter (E) to the negative supply rail or ground.
- Apply a control signal to the base (B) to regulate the transistor's operation.
Application Circuit
The application circuit diagram for the JAN2N2222A illustrates how to connect the transistor in an amplifier or switching circuit. It includes connections for power supply, load, and control signals, ensuring proper operation and reliable performance.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- 2N2222A: A similar NPN BJT from various manufacturers offering comparable features and performance.
- BC547B: An alternative NPN BJT from Philips Semiconductors with equivalent functionality.
Complementary
The JAN2N2222A can be complemented by the JAN2N2221A, which offers a complementary PNP BJT for use in push-pull amplifier configurations or other applications requiring both NPN and PNP transistors.
When selecting complementary transistors, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.
Frequently Asked Questions
Q: What is the maximum current rating of the JAN2N2222A?
A: The JAN2N2222A has a maximum current rating of 600mA.
Q: Can the JAN2N2222A be used in high-frequency applications?
A: Yes, the JAN2N2222A features fast switching speeds and can be used in high-frequency applications up to several hundred kHz.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-18-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 75 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 1 V |
Maximum DC Collector Current | 800 mA | Pd - Power Dissipation | 500 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature ! | + 200 C |
Brand | Microchip / Microsemi | Product Type ! | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.081218 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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