IRFR9024NPBF

TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF
4,280 Effective Inventory

IRFR9024NPBF

Effective Inventory4,280

TO-252AA P-Channel MOSFET Transistor: IRFR9024NPBF

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Service & Packaging

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IRFR9024NPBF DataSheet
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IRFR9024NPBF Description

The IRFR9024NPBF is a robust power field-effect transistor from Infineon Technologies, designed for reliable high-speed switching applications in harsh environments. This device is ideal for industrial communication systems, featuring low on-resistance, fast switching speed, and a wide operating temperature range.

Pin Details

The IRFR9024NPBF is a P-channel MOSFET with 11A continuous drain current, 60V drain-source voltage, and 2.8V threshold voltage. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • VCC: Positive Power Supply
  • GND: Ground
  • D: Drain
  • S: Source
  • G: Gate

Features

  • Low On-Resistance: Optimized for low power consumption and high-speed switching applications.
  • Fast Switching Speed: Enables reliable data transmission in harsh environments with minimal signal distortion.
  • Wide Operating Temperature Range: Operates efficiently between -40°C and +150°C, ensuring stable performance in various environmental conditions.

Applications

The IRFR9024NPBF is commonly used in industrial communication systems that require reliable high-speed switching applications, such as motor control circuits, DC-DC converters, and battery management systems.

Where to Use:

  • Industrial automation systems
  • Motor control circuits
  • DC-DC converters
  • Battery management systems

Manufacturer

The IRFR9024NPBF is manufactured by Infineon Technologies, a global leader in semiconductor technology. It falls under the category of power field-effect transistors, which are designed to facilitate reliable high-speed switching applications in harsh environments.

Packages

The IRFR9024NPBF comes in an SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of IRFR9024NPBF

  • IRFZ44N: A comparable power field-effect transistor from Infineon Technologies with similar features and performance.
IRFR9024NPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature ! AVALANCHE RATED, HIGH RELIABILITY Avalanche Energy Rating (Eas) 62 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V Drain Current-Max (Abs) (ID) 11 A
Drain Current-Max (ID) 11 A Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 44 A Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Finish MATTE TIN OVER NICKEL
Terminal Form ! GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRFR9024NPBF PDF Download

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