IRFR4615PBF

Name: IRFR4615PBF
Brand: Infineon Technologies
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

HEXFET with a threshold charge of 26nC

7,695 Effective Inventory

IRFR4615PBF

Effective Inventory7,695

HEXFET with a threshold charge of 26nC

Manufacturer Part # : IRFR4615PBF
Package/Case: TO252-3
Brand: Infineon Technologies
Product Categories : Single FETs, MOSFETs

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IRFR4615PBF DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$0.601	$0.60
200	$0.233	$46.60
500	$0.225	$112.50
1000	$0.220	$220.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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IRFR4615PBF Details

The IRFR4615PBF is a power MOSFET transistor from Infineon Technologies, designed for high power switching applications. This transistor features a low on-state resistance and fast switching capabilities, making it suitable for efficient power management in various electronic circuits.

Pinout

1 (Gate): Gate Terminal
2 (Drain): Drain Terminal
3 (Source): Source Terminal

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

Low On-State Resistance: Minimizes power loss and improves efficiency.
Fast Switching Speed: Allows for rapid switching in power management circuits.
High Power Handling Capacity: Capable of handling high power levels for robust performance.
Enhanced Thermal Performance: Designed for effective heat dissipation in high-power applications.
Robust Construction: Features a durable construction for reliable operation in demanding environments.

Application

Power Supplies: Used in power supply circuits for efficient power switching.
Motor Drives: Suitable for motor drive applications requiring high power handling.
Inverters: Used in inverter circuits for voltage conversion and control.

Where to Use

The IRFR4615PBF is ideal for applications that require high power switching capabilities, such as power supplies, motor drives, and inverters. It is designed to enhance power management efficiency and reliability in various electronic systems.

How to Use

Connect the IRFR4615PBF to your circuit by wiring the Gate, Drain, and Source terminals according to the application requirements. Ensure proper heat sinking for effective thermal management, especially in high-power applications. Follow recommended voltage and current ratings for optimal performance. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the IRFR4615PBF demonstrates how to integrate the power MOSFET into your electronic system. It showcases connections for the Gate, Drain, and Source terminals, ensuring proper functionality and power handling capabilities.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

IRFB4115PBF: A similar power MOSFET with comparable specifications and performance.
IRF4905PBF: An alternative power MOSFET offering similar power handling capabilities.

Complementary

The IRFR4615PBF can be complemented by the IRF7105PBF, which provides additional features such as lower on-state resistance and improved thermal performance, ideal for high-power applications requiring efficient switching.

When selecting complementary power MOSFETs, ensure compatibility with the overall circuit requirements for optimal performance.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the IRFR4615PBF?

A: The IRFR4615PBF is capable of handling power levels up to a certain limit. Refer to the datasheet for specific ratings and operating conditions.

Q: Is the IRFR4615PBF suitable for motor drive applications?

A: Yes, the IRFR4615PBF is well-suited for motor drive applications requiring efficient power handling and fast switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	TO-252-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	33 A	Rds On - Drain-Source Resistance	34 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	26 nC
Pd - Power Dissipation	144 W	Brand	Infineon Technologies
Configuration	Single	Height	2.3 mm
Length	6.5 mm	Product Type !	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	6.22 mm
Part # Aliases	SP001578144	Unit Weight	0.011640 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRFR4615PBF PDF Download

FAQs

What is IRFR4615PBF?

The IRFR4615PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is ideal for high-power switching applications in power supplies, motor controls, and DC-DC converters.

How Does IRFR4615PBF Work?

The IRFR4615PBF operates as a voltage-controlled switch, allowing high current to flow when a sufficient gate voltage is applied. It can efficiently control the flow of power in electronic circuits and is capable of handling high voltage and current levels.

How Many Pins does IRFR4615PBF have and What are the Functions of the Pinout Configuration?

The IRFR4615PBF is housed in a TO-252 package. The pinout configuration includes:

Gate (G): Pin for applying the control voltage to turn the MOSFET on and off.
Drain (D): Pin through which the output voltage is connected.
Pin through which the input voltage is connected and the return path for the output current.

What are the Pros and Cons of IRFR4615PBF?

Pros:

High Power Handling: Capable of handling high voltage and current levels, suitable for high-power applications.
Efficient Switching: Provides efficient power switching for power supplies and motor control systems.
Compact Package: Housed in a TO-252 package, which is space-efficient and suitable for compact designs.

Cons:

Drive Circuitry: May require additional drive circuitry for optimal performance in some applications.
Heat Dissipation: High-power applications may require additional heat sinking for thermal management.