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IRFB20N50KPBF
IRFB20N50KPBF descriptionIRFB20N50KPBF
IRFB20N50KPBF description
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IRFB20N50KPBF DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $3.709 | $3.71 |
| 10 | $3.207 | $32.07 |
| 30 | $2.909 | $87.27 |
| 100 | $2.608 | $260.80 |
| 500 | $2.470 | $1,235.00 |
| 1000 | $2.408 | $2,408.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
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IRFB20N50KPBF Details
The IRFB20N50KPBF is a power MOSFET from Infineon Technologies, designed for high-power switching applications. This MOSFET features a voltage rating of 500V and a continuous drain current of 20A, making it suitable for a wide range of power control and conversion systems. It is housed in a TO-220AB package, allowing for easy mounting and heat dissipation.
Pinout
- 1 (Gate): Gate Terminal
- 2 (Drain): Drain Terminal
- 3 (Source): Source Terminal
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Voltage Rating: Rated for 500V for robust power handling capabilities.
- High Current Capacity: Capable of handling continuous drain currents up to 20A.
- Low On-Resistance: Offers low on-state resistance for efficient power switching.
- TO-220AB Package: Housed in a standard TO-220AB package for easy mounting.
- Enhanced Thermal Performance: Designed for improved heat dissipation and reliability.
Application
- Power Supplies: Ideal for power supply circuits and converters.
- Motor Drives: Used in motor control and drive circuits for efficient power delivery.
- Inverters: Suitable for inverter systems in various applications.
Where to Use
The IRFB20N50KPBF is recommended for applications requiring high-power switching, such as power supplies, motor drives, and inverters. It is particularly useful in systems that demand efficient power handling and low on-state resistance.
How to Use
Connect the IRFB20N50KPBF to your circuit by wiring the gate, drain, and source terminals accordingly. Provide adequate gate drive voltage for proper switching operation. Ensure proper heat sinking for thermal management to maintain reliability. For detailed usage instructions, consult the datasheet.
Application Circuit
The application circuit diagram for the IRFB20N50KPBF demonstrates how to integrate the MOSFET into your power system. It includes connections for the gate, drain, source, and any necessary control components to achieve efficient power switching.
(Tip: For detailed circuit diagram connections and operational guidelines, refer to the datasheet.)
Equivalents
- IRFZ44N: A comparable power MOSFET with similar characteristics and performance.
- IRFB4110PBF: An alternative power MOSFET offering equivalent power capabilities.
Complementary
The IRFB20N50KPBF can be paired with the IR2104PBF gate driver for enhanced switching control and performance. Ensure compatibility and proper drive voltage levels for optimal operation.
When selecting complementary components, verify that their specifications align with your application requirements for seamless integration.
Frequently Asked Questions
Q: What is the maximum voltage rating of the IRFB20N50KPBF?
A: The IRFB20N50KPBF has a voltage rating of 500V, making it suitable for high-power applications. Refer to the datasheet for detailed specifications and limitations.
Q: Can the IRFB20N50KPBF be used in motor drive applications?
A: Yes, the IRFB20N50KPBF is well-suited for motor drive circuits, offering high current handling capabilities and efficient switching performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 250 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 110 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
| Pd - Power Dissipation | 280 W | Channel Mode | Enhancement |
| Series | IRFB | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 33 ns |
| Forward Transconductance - Min | 11 S | Height | 15.49 mm |
| Length | 10.41 mm | Product Type ! | MOSFET |
| Rise Time ! | 74 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns | Typical Turn-On Delay Time | 22 ns |
| Width | 4.7 mm | Unit Weight | 0.068784 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
| Quantity | Unit Price |
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