IRF650B

Name: IRF650B
Brand: International Rectifier
Rating: 4.5 (10 reviews)
Author: Lisleapex

Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

5,323 Effective Inventory

IRF650B

Effective Inventory5,323

Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

Manufacturer Part # : IRF650B
Package/Case: TO-220
Brand: International Rectifier
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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IRF650B DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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IRF650B Description

The IRF650B is a power MOSFET transistor with a maximum drain-source voltage of 200 volts, a continuous drain current of 9.8 amperes, and a low on-resistance of 0.55 ohms. This device is ideal for high-power switching and amplification applications, such as motor control and power supplies.

Pin Details

The IRF650B is a power MOSFET transistor with 5 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

D: Drain
S: Source
G: Gate
R: Return
VCC: Positive Power Supply

Features

High Power Handling: The IRF650B is designed to handle high power applications, making it suitable for demanding environments.
Low On-Resistance: With an on-resistance of 0.55 ohms, this device minimizes energy losses and maximizes efficiency in switching applications.
High Current Capability: The IRF650B can handle continuous drain currents up to 9.8 amperes, making it suitable for high-power applications.

Applications

The IRF650B is commonly used in various electronic applications that require high power switching and amplification, such as motor control and power supplies.

Where to Use:

Motor control systems
Power supplies
Lighting systems
Aerospace applications

Manufacturer

The IRF650B is manufactured by International Rectifier (IR), a global leader in power electronics and semiconductor technology.

This product was developed to meet the growing demand for high-power switching and amplification devices, which are essential in various industrial, commercial, and consumer applications.

Packages

The IRF650B comes in an 5-pin TO-220 package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of IRF650B

IRF640: A comparable power MOSFET transistor from International Rectifier with similar features and performance.
FQP50N06L: An alternative power MOSFET transistor from Fairchild Semiconductor that offers equivalent functionality.

FAQ

Q: What is the maximum drain-source voltage of the IRF650B?
A: The maximum drain-source voltage is 200 volts, making it suitable for high-voltage applications.

Q: Can the IRF650B handle high currents?
A: Yes, the IRF650B can handle continuous drain currents up to 9.8 amperes, making it suitable for high-power applications.

Q: Is the IRF650B suitable for motor control applications?
A: Yes, the IRF650B is commonly used in motor control systems due to its high power handling and low on-resistance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Part Package Code	SFM	Pin Count !	3
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	600 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (Abs) (ID)	28 A	Drain Current-Max (ID)	28 A
Drain-source On Resistance-Max	0.085 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	156 W
Pulsed Drain Current-Max (IDM)	112 A	Qualification Status !	Not Qualified
Surface Mount !	NO	Terminal Finish	TIN LEAD
Terminal Form !	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRF650B PDF Download