IRF1324S-7PPBF

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Product Description: 24V 240A N-Channel D2PAK-7 MOSFET with a low on-resistance of 1mΩ at 160A and a power dissipation of 300W at 10V

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IRF1324S-7PPBF DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $2.824 $2.82
200 $1.093 $218.60
500 $1.054 $527.00
1000 $1.036 $1,036.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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IRF1324S-7PPBF Details

The IRF1324S-7PPBF is a power MOSFET from Infineon Technologies, designed for high-performance power switching applications. This MOSFET features a low on-state resistance and high current-carrying capability, making it ideal for power management in various electronic systems. It is housed in a TO-263 package, offering thermal efficiency and robust performance.

Pinout

  • 1 (Gate): Control Input
  • 2 (Drain): Power Output
  • 3 (Source): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-State Resistance: Provides efficient power switching with minimal conduction losses.
  • High Current Capability: Capable of handling high currents for demanding applications.
  • Enhanced Thermal Performance: TO-263 package ensures efficient heat dissipation and reliability.
  • Fast Switching Speed: Enables rapid switching for improved efficiency.
  • Robust Construction: Designed for durability and long-term reliability in power management systems.

Application

  • Power Supplies: Suitable for power supply units requiring efficient switching and high current handling.
  • Motor Control: Used in motor control applications for reliable power management and performance.
  • Voltage Regulators: Ideal for voltage regulation circuits due to its low resistance and high current capability.

Where to Use

The IRF1324S-7PPBF is recommended for applications that demand high-efficiency power switching and robust performance. It is commonly used in power supplies, motor control systems, and voltage regulation circuits to ensure reliable power management.

How to Use

Utilize the Gate, Drain, and Source pins of the IRF1324S-7PPBF for controlling power flow in your circuit. Connect the Gate to the control signal, the Drain to the load, and the Source to ground. Ensure proper heat sinking for thermal management and adhere to the recommended operating conditions for optimal performance. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the IRF1324S-7PPBF illustrates how to integrate the power MOSFET into your circuit design for efficient power switching. It includes connections for control, power, and ground, ensuring safe and reliable operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IRF1405: A similar power MOSFET with comparable specifications and performance characteristics.
  • IRFZ44N: An alternative power MOSFET suitable for high-power switching applications.

Complementary

The IRF1324S-7PPBF can be paired with the IRF3205, offering complementary power switching capabilities for enhanced performance in high-power applications.

When selecting complementary MOSFETs, ensure compatibility and performance alignment with your specific application requirements.

Frequently Asked Questions

Q: What is the maximum current rating of the IRF1324S-7PPBF?

A: The IRF1324S-7PPBF has a maximum current rating of [XX]A. Refer to the datasheet for detailed current handling specifications and operating conditions.

Q: Is the IRF1324S-7PPBF suitable for high-frequency switching applications?

A: The IRF1324S-7PPBF is designed for [mention frequency range or specify if suitable/not suitable] high-frequency switching. Consider the specific application requirements and refer to the datasheet for more information.

IRF1324S-7PPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 24 V
Id - Continuous Drain Current 429 A Rds On - Drain-Source Resistance 800 uOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 180 nC
Pd - Power Dissipation 300 W Brand Infineon Technologies
Configuration Single Height 2.3 mm
Length 6.5 mm Product Type ! MOSFET
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 6.22 mm
Part # Aliases SP001571226 Unit Weight 0.011640 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRF1324S-7PPBF PDF Download

FAQs

What is IRF1324S-7PPBF?

The IRF1324S-7PPBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is optimized for high efficiency and high power density applications such as synchronous rectification, primary side switching, and motor control.

How Does IRF1324S-7PPBF Work?

The IRF1324S-7PPBF operates by controlling the flow of current between the source and drain terminals using an electric field. By applying a voltage to the gate terminal, the MOSFET can switch on and off rapidly, making it suitable for high-frequency switching applications. It offers low conduction and switching losses, contributing to overall system efficiency.

How Many Pins does IRF1324S-7PPBF have and What are the Functions of the Pinout Configuration?

The IRF1324S-7PPBF is housed in a 7-pin D²PAK (TO-263) package. The pinout configuration includes:

  • GATE: Gate control terminal.
  • SOURCE: Source terminal for current flow.
  • DRAIN: Drain terminal connected to the load.
  • N/C: Not connected pin.

What are the Pros and Cons of IRF1324S-7PPBF?

Pros:

  • High Power Density: Optimized for high power density applications, reducing board space and system weight.
  • High Efficiency: Offers low conduction and switching losses for improved energy efficiency.
  • High Frequency Operation: Suitable for high-frequency switching applications, enabling compact and efficient designs.
  • Suitable for Synchronous Rectification: Ideal for synchronous rectification applications in power supplies and converters.

Cons:

  • Driver Consideration: Requires an appropriate gate driver for optimal performance in high-speed switching applications.
  • Heat Dissipation: High-power density devices like the IRF1324S-7PPBF may require effective thermal management.

Are There Any Equivalents/Alternatives to IRF1324S-7PPBF for Recommendation?

Equivalents to the IRF1324S-7PPBF include the IRF1405PBF from Infineon Technologies and the FDPF7N50NZ from Fairchild Semiconductor. Alternatives include the IPP60R190C6 from Infineon Technologies and the SIHP20N50C-E3 from Vishay.

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