HY57V56820CT-H
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54HY57V56820CT-H
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, TSOP2-54
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Service & Packaging
Service & Packaging
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HY57V56820CT-H DataSheet

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Interested Parts
HY57V56820CT-H Description
The HY57V56820CT-H is a synchronous DRAM module from SK Hynix Inc, designed for high-performance applications in multimedia devices, networking equipment, and consumer electronics. This device features 512MB density organized as 8 banks, each with 4Mx16 bits, operating at a speed of 133MHz with CAS latency of 3.
Features
- Synchronous DRAM Module: Offers high-performance data transfer with a speed of 133MHz and CAS latency of 3.
- 512MB Density: Organized as 8 banks, each with 4Mx16 bits for efficient memory usage.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
Applications
The HY57V56820CT-H is commonly used in multimedia devices, networking equipment, and consumer electronics where high-performance memory is required.
Where to Use:
- Multimedia devices
- Networking equipment
- Consumer electronics
Manufacturer
The HY57V56820CT-H is manufactured by SK Hynix Inc, a global leader in semiconductor technology. It falls under the category of synchronous DRAM modules, designed to provide high-performance memory solutions for various applications.
Packages
The HY57V56820CT-H comes in a 66-pin TSOP-II package, making it suitable for compact circuit designs.
FAQ
Q: What is the operating speed of the HY57V56820CT-H?
A: It operates at a speed of 133MHz with CAS latency of 3.
Q: Can the HY57V56820CT-H be used in consumer electronics?
A: Yes, it is designed for use in consumer electronics where high-performance memory is required.
Q: How does the HY57V56820CT-H handle power consumption?
A: It is optimized for low power usage, ideal for battery-powered devices.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP2 |
Pin Count ! | 54 | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.24 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 5.4 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
Length | 22.238 mm | Memory Density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM | Memory Width | 8 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 54 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Organization | 32MX8 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 | Package Equivalence Code | TSOP54,.46,32 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies ! | 3.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.194 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.001 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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