HY57V56820BT-H
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54HY57V56820BT-H
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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HY57V56820BT-H DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
HY57V56820BT-H Description
The HY57V56820BT-H is a high-performance 256Mb Synchronous DRAM (SDRAM) module from SK Hynix Inc, designed for reliable memory storage and access in various applications. This device features advanced technology and robust performance, making it suitable for embedded systems, networking equipment, telecommunication devices, data storage systems, automotive electronics, industrial control systems, and other applications where high-speed and reliable memory is essential.
Features
- 256Mb Synchronous DRAM (SDRAM) Module: Offers high-performance memory storage and access capabilities.
- 8 Banks, 4 Banks Group: Enables efficient data transfer and processing.
- Clock Frequency of 133/166/200MHz: Supports high-speed data transmission and processing.
- Fully Synchronous Operation: Ensures reliable and efficient memory access.
- Double Data Rate (DDR) Operation: Doubles the effective data transfer rate.
- 64ms Refresh: Maintains data integrity by periodically refreshing stored data.
- Programmable Burst Length and Burst Type: Allows for customization of memory access patterns.
- Commercial Temperature Range (0°C to +70°C): Operates efficiently within a wide temperature range, making it suitable for various applications.
Applications
The HY57V56820BT-H is commonly used in systems that require high-performance memory storage and access, such as embedded systems, networking equipment, telecommunication devices, data storage systems, automotive electronics, industrial control systems, and other applications where reliable and efficient memory is essential.
Where to Use:
- Embedded systems
- Networking equipment
- Telecommunication devices
- Data storage systems
- Automotive electronics
- Industrial control systems
Manufacturer
The HY57V56820BT-H is manufactured by SK Hynix Inc, a leading semiconductor company known for its high-quality and reliable products.
Packages
The HY57V56820BT-H comes in a module-based package, designed for easy integration into electronic circuits.
FAQ
Q: What is the clock frequency of the HY57V56820BT-H?
A: It operates at a clock frequency of 133/166/200MHz, making it suitable for high-speed data transmission and processing.
Q: Can the HY57V56820BT-H be used in automotive electronics?
A: Yes, it is designed to operate within the commercial temperature range (0°C to +70°C), making it suitable for use in automotive electronics and other applications where high-performance memory storage and access are required.
Q: How does the HY57V56820BT-H handle data refresh?
A: It maintains data integrity by periodically refreshing stored data, ensuring reliable memory access and minimizing errors.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | No | Rohs Code | No |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP2 |
Pin Count ! | 54 | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.24 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 5.4 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
Length | 22.238 mm | Memory Density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM | Memory Width | 8 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 54 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Organization | 32MX8 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 | Package Equivalence Code | TSOP54,.46,32 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies ! | 3.3 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.194 mm | Self Refresh | YES |
Sequential Burst Length | 1,2,4,8,FP | Standby Current-Max | 0.001 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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