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HY57V28820AT-H
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
HY57V28820AT-H
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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HY57V28820AT-H DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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HY57V28820AT-H Description
The HY57V28820AT-H is a synchronous DRAM from Hynix, designed for high-performance computing applications. This device features 16M x 8-bit configuration, with a clock frequency of up to 133 MHz and low power consumption.
Features
The HY57V28820AT-H features:
- Synchronous DRAM with a clock frequency of up to 133 MHz
- 16M x 8-bit configuration
- Low power consumption
- Burst mode operation for improved performance
- Write mask and output enable signals for data integrity
Applications
The HY57V28820AT-H is suitable for use in a variety of applications, including high-performance computing systems, servers, and workstations.
Where to Use:
This device can be used in:
- High-performance computing systems
- Servers
- Workstations
- Embedded systems requiring high-speed memory
Manufacturer
The HY57V28820AT-H is manufactured by Hynix, a leading provider of semiconductor components.
Packages
The HY57V28820AT-H comes in a TSOP2-54 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the device into electronic circuits.
Equivalent Parts of HY57V28820AT-H
- MT48H16M8A2: A comparable synchronous DRAM from Micron Technology with similar features and performance.
- Samsung K4X1G1046D-H0: An alternative synchronous DRAM from Samsung Electronics that offers equivalent functionality.
FAQ
Q: What is the clock frequency of the HY57V28820AT-H?
A: The device operates at a clock frequency of up to 133 MHz, making it suitable for high-performance computing applications.
Q: How does the HY57V28820AT-H handle data integrity?
A: The device features write mask and output enable signals to ensure data integrity and prevent errors during data transfer.
Q: Can the HY57V28820AT-H be used in embedded systems requiring high-speed memory?
A: Yes, the device is suitable for use in embedded systems that require high-speed memory and can operate reliably at clock frequencies up to 133 MHz.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Part Package Code | TSOP2 | Pin Count ! | 54 |
| ECCN Code | EAR99 | HTS Code ! | 8542.32.00.02 |
| Access Mode ! | FOUR BANK PAGE BURST | Access Time-Max | 5.4 ns |
| Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 133 MHz |
| I/O Type | COMMON | Interleaved Burst Length | 1,2,4,8 |
| JESD-30 Code | R-PDSO-G54 | Length | 22.22 mm |
| Memory Density | 134217728 bit | Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 8 | Number of Functions | 1 |
| Number of Ports ! | 1 | Number of Terminals | 54 |
| Number of Words | 16777216 words | Number of Words Code | 16000000 |
| Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 70 °C |
| Organization | 16MX8 | Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
| Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
| Refresh Cycles | 4096 | Seated Height-Max | 1.2 mm |
| Self Refresh | YES | Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max | 0.002 A | Supply Current-Max | 0.22 mA |
| Supply Voltage-Max (Vsup) | 3.6 V | Supply Voltage-Min (Vsup) | 3 V |
| Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
| Technology | CMOS | Temperature Grade ! | COMMERCIAL |
| Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 10.16 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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