HY57V161610FTP-6

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Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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HY57V161610FTP-6 DataSheet

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Please submit RFQ for HY57V161610FTP-6 or email to us: Email: [email protected], we will contact you in 12 hours.

HY57V161610FTP-6 Details

The HY57V161610FTP-6 is a high-speed, low-power synchronous dynamic RAM chip with a capacity of 128 MB and a speed of 66 MHz. This device is designed for use in various electronic devices such as smartphones, tablets, and computers.

Pinout

  • DQ0-DQ15: Data Input/Output Pins (16)
  • WE: Write Enable Pin
  • CAS: Column Address Strobe Pin
  • RAS: Row Address Strobe Pin
  • BA0-BA2: Bank Address Pins (3)
  • VDD: Positive Power Supply Pin
  • GND: Ground Pin

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Operation: Supports speeds up to 66 MHz for fast data transfer.
  • Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
  • 128 MB Capacity: Offers a large memory capacity for storing and processing data.
  • Synchronous Operation: Operates in sync with the system clock for efficient data transfer.

Applications

The HY57V161610FTP-6 is suitable for use in various electronic devices, including:

  • Smartphones and tablets
  • Computers and laptops
  • Embedded systems and IoT devices

Where to Use

The HY57V161610FTP-6 can be used in various applications where high-speed, low-power memory is required. Some examples include:

  • Data storage and processing
  • Embedded systems and IoT devices
  • Mobile devices and wearables

How to Use

To use the HY57V161610FTP-6, follow these steps:

  1. Connect the DQ0-DQ15 pins to the system's data bus.
  2. Apply a positive power supply voltage to the VDD pin and ground the GND pin.
  3. Write enable (WE) and row address strobe (RAS) signals must be applied according to the device's timing specifications.

Application Circuit

The application circuit diagram for the HY57V161610FTP-6 illustrates how to connect the memory chip to a system. It includes connections for power supply, ground, and data bus lines, ensuring proper operation and reliable data transfer.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • MT47H64M8TR-25E: A similar high-speed, low-power synchronous dynamic RAM chip from Micron Technology.
  • K4X1G104Q-HC30: An alternative high-speed, low-power synchronous dynamic RAM chip from SK Hynix.

Complementary

The HY57V161610FTP-6 can be complemented by other memory chips or devices that offer similar features and performance. When selecting complementary components, ensure that their specifications align with your specific application requirements for optimal performance and compatibility.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Part Package Code TSOP2 Pin Count ! 50
Reach Compliance Code compliant ECCN Code EAR99
HTS Code ! 8542.32.00.02 Access Mode ! DUAL BANK PAGE BURST
Access Time-Max 5.4 ns Additional Feature ! AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz I/O Type COMMON
Interleaved Burst Length 1,2,4,8 JESD-30 Code R-PDSO-G50
JESD-609 Code e6 Length 20.968 mm
Memory Density 16777216 bit Memory IC Type SYNCHRONOUS DRAM
Memory Width 16 Number of Functions 1
Number of Ports ! 1 Number of Terminals 50
Number of Words 1048576 words Number of Words Code 1000000
Operating Mode ! SYNCHRONOUS Operating Temperature-Max 70 °C
Organization 1MX16 Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY Package Code TSOP2
Package Equivalence Code TSOP50,.46,32 Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Power Supplies ! 3.3 V
Qualification Status ! Not Qualified Refresh Cycles 4096
Seated Height-Max 1.2 mm Self Refresh YES
Sequential Burst Length 1,2,4,8,FP Standby Current-Max 0.002 A
Supply Current-Max 0.12 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! COMMERCIAL Terminal Finish TIN BISMUTH
Terminal Form ! GULL WING Terminal Pitch ! 0.8 mm
Terminal Position DUAL Width 10.16 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification HY57V161610FTP-6 PDF Download

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