HY27UF084G2B-TPCB

Name: HY27UF084G2B-TPCB
Brand: SK Hynix
Rating: 4.5 (10 reviews)
Author: Lisleapex

Flash, 512MX8, 20ns, PDSO48, TSOP1-48

4,134 Effective Inventory

HY27UF084G2B-TPCB

Effective Inventory4,134

Flash, 512MX8, 20ns, PDSO48, TSOP1-48

Manufacturer Part # : HY27UF084G2B-TPCB
Package/Case: TSOP-48
Brand: SK Hynix
Product Categories : Microcontrollers

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

WireTransfer

Paypal

CreditCard

WesternUnion

MoneyGram

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

HY27UF084G2B-TPCB DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Interested Parts

GMS30C7201
SK Hynix
GMS97C52
SK Hynix
IP9005L
SK Hynix
K9WAG08U1B-PIB0
Samsung Electro-Mechanics
K9F1G08U0A-PCB0
Samsung Electro-Mechanics
K9F2G08U0A-PCB0
Samsung Electro-Mechanics
K9F5608U0D-PCB0
Samsung Electro-Mechanics
EN29LV160BT-70TIP
Eon Silicon Solution Inc

Rapid Quote

Please submit RFQ for HY27UF084G2B-TPCB or email to us: Email: [email protected], we will contact you in 12 hours.

Quantity^*

Contact Person^*

E-mail^*

Company Name

Anything else?

HY27UF084G2B-TPCB Details

1.SUMMARY DESCRIPTION Hynix NAND HY27UF(08/16)4G2B Series have 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the mostcost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4096 blocks, composed by 64 pages. A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 1.5ms on a 128K-byte block. Data in the page can be read out at 25ns cycle time per byte(x8). The I/O pins serve as the ports for address and data input/output as wellas command input.FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8/x16 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 4096 blocks - x16 : (1K + 32) words x 64 pages x 4096 blocks PAGE SIZE - (2K + 64 spare) Bytes - (1K + 32 spare) Words BLOCK SIZE - (128K + 4Kspare) Bytes - (64K + 2Kspare) Words PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential access : 25ns (min.) - Page program time : 200us (typ.) - Multi-page program time (2 pages) : 200us (Typ) COPY BACK PROGRAM - Automatic block download without latency time FAST BLOCK ERASE - Block erase time: 1.5ms (Typ) - Multi-block erase time (2 blocks) : 1.5ms (Typ) STATUS REGISTER - Normal Status Register (Read/Program/Erase) - Extended Status Register (EDC) ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages. - 4th cycle : Page size, Block size, Organization, Spare size - 5th cycle : Multiplane information CHIP ENABLE DON’T CARE - Simple interface with microcontroller HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions. DATA RETENTION - 100,000 Program/Erase cycles (with 1bit/528byte ECC) - 10 years Data Retention PACKAGE - HY27UF(08/16)4G2B-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27UF(08/16)4G2B-T (Lead) - HY27UF(08/16)4G2B-TP (Lead Free)

Key Features

HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
MULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time.
NAND INTERFACE
- x8/x16 bus width.
- Address/ Data Multiplexing
- Pinout compatiblity for all densities
SUPPLY VOLTAGE
- 3.3V device : Vcc = 2.7 V ~3.6 V
MEMORY CELL ARRAY
- x8 : (2K + 64) bytes x 64 pages x 4096 blocks
- x16 : (1K + 32) words x 64 pages x 4096 blocks
PAGE SIZE
- (2K + 64 spare) Bytes
- (1K + 32 spare) Words
BLOCK SIZE
- (128K + 4Kspare) Bytes
- (64K + 2Kspare) Words
PAGE READ / PROGRAM
- Random access : 25us (max.)
- Sequential access : 25ns (min.)
- Page program time : 200us (typ.)
- Multi-page program time (2 pages) : 200us (Typ)
COPY BACK PROGRAM
- Automatic block download without latency time
FAST BLOCK ERASE
- Block erase time: 1.5ms (Typ)
- Multi-block erase time (2 blocks) : 1.5ms (Typ) STATUS REGISTER
- Normal Status Register (Read/Program/Erase)
- Extended Status Register (EDC)
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code
- 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages.
- 4th cycle : Page size, Block size, Organization, Spare size
- 5th cycle : Multiplane information
CHIP ENABLE DON’T CARE
- Simple interface with microcontroller HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions. DATA RETENTION
- 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- 10 years Data Retention
PACKAGE
- HY27UF(08/16)4G2B-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27UF(08/16)4G2B-T (Lead)
- HY27UF(08/16)4G2B-TP (Lead Free)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code	Yes	Rohs Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code !	8542.32.00.51
Access Time-Max	20 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G48
JESD-609 Code	e3	Length	18.4 mm
Memory Density	4294967296 bit	Memory IC Type	FLASH
Memory Width	8	Moisture Sensitivity Level	1
Number of Functions	1	Number of Sectors/Size	4K
Number of Terminals	48	Number of Words	536870912 words
Number of Words Code	512000000	Operating Mode !	ASYNCHRONOUS
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	512MX8	Package Body Material	PLASTIC/EPOXY
Package Code	TSOP1	Package Equivalence Code	TSSOP48,.8,20
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE
Page Size	2K words	Parallel/Serial	PARALLEL
Power Supplies !	3/3.3 V	Programming Voltage !	3.3 V
Qualification Status !	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.2 mm	Sector Size	128K
Standby Current-Max	0.00005 A	Supply Current-Max	0.03 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	COMMERCIAL
Terminal Finish	MATTE TIN	Terminal Form !	GULL WING
Terminal Pitch !	0.5 mm	Terminal Position	DUAL
Toggle Bit	NO	Type	SLC NAND TYPE
Width	12 mm

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification HY27UF084G2B-TPCB PDF Download