HUF75645S3ST

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Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R

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HUF75645S3ST DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
100 $1.678 $167.80
30 $1.706 $51.18
10 $1.731 $17.31
1 $1.769 $1.77

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for HUF75645S3ST or email to us: Email: [email protected], we will contact you in 12 hours.

HUF75645S3ST Details

The HUF75645S3ST is a power MOSFET from Infineon Technologies, designed for high-performance switching applications in power supplies, motor controls, and inverters. This MOSFET features a low on-state resistance for efficient power handling and a rugged design for reliable operation in harsh environments.

Pinout

  • 1 (Gate): Gate Terminal
  • 2 (Drain): Drain Terminal
  • 3 (Source): Source Terminal
  • 4 (NC): No Connection

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-State Resistance: Provides efficient power handling with minimal voltage drop.
  • Rugged Design: Built to withstand tough operating conditions for reliable performance.
  • High Performance: Offers high switching speed and low switching losses for enhanced efficiency.
  • Wide Application Range: Suitable for various power electronics applications requiring high power handling capacity.
  • Temperature Resilience: Performs consistently over a wide temperature range for versatile use.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power management.
  • Motor Controls: Used in motor control systems for precise and responsive operation.
  • Inverters: Suitable for inverter applications requiring high-power switching capabilities.

Where to Use

The HUF75645S3ST is recommended for applications that demand reliable and efficient power switching, particularly in power supplies, motor control systems, and inverters. Its low on-state resistance and rugged design make it suitable for challenging environments.

How to Use

Connect the HUF75645S3ST to your circuit by wiring the Gate, Drain, and Source terminals as per the application requirements. Ensure proper heat dissipation for optimal performance. Refer to the datasheet for detailed usage instructions and application notes.

Application Circuit

The application circuit diagram for the HUF75645S3ST illustrates how to integrate the MOSFET into your power electronics system. It includes connections for the gate, drain, source terminals, and external components, ensuring proper functionality and performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IRF1404: An alternative power MOSFET with similar power handling capabilities.
  • FDP8878: A comparable MOSFET offering high performance in power switching applications.

Complementary

The HUF75645S3ST can be paired with the HUF76107P3 for dual MOSFET configurations in high-power applications, providing enhanced power handling capacity and efficiency.

When selecting complementary components, ensure compatibility and synchronization for optimal system performance.

Frequently Asked Questions

Q: What is the maximum voltage rating of the HUF75645S3ST?

A: The HUF75645S3ST has a maximum voltage rating of [specific voltage]. Please refer to the datasheet for detailed specifications.

Q: Is the HUF75645S3ST suitable for high-frequency applications?

A: Yes, the HUF75645S3ST is designed for high-frequency switching applications with its high performance and low switching losses.

HUF75645S3ST

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Lifetime Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418AJ
MSL Type 1 MSL Temp (°C) 245
Container Type REEL Container Qty. 800
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 100
VGS Max (V) ±20 VGS(th) Max (V) 4
ID Max (A) 75 PD Max (W) 310
RDS(on) Max @ VGS = 10 V (mΩ) 14 Qg Typ @ VGS = 10 V (nC) 106
Ciss Typ (pF) 3790 Pricing ($/Unit) $1.5488Sample

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification HUF75645S3ST PDF Download

FAQs

What is HUF75645S3ST?

The HUF75645S3ST is a N-channel UltraFET Power MOSFET designed by ON Semiconductor. It is suitable for a wide range of applications requiring high power switching and efficient power management, such as motor control, power supplies, and automotive systems.

How Does HUF75645S3ST Work?

The HUF75645S3ST works by controlling the flow of electrical current between the source and drain terminals using a voltage applied to the gate terminal. It is designed to handle high voltage and high current, making it suitable for power switching applications. The MOSFET's low on-resistance and fast switching characteristics contribute to efficient power management and high-performance operation.

How Many Pins does HUF75645S3ST have and What are the Functions of the Pinout Configuration?

The HUF75645S3ST is housed in a TO-263 package. The pinout configuration includes:

  • GATE: Gate control terminal for turning the MOSFET on and off.
  • DRAIN: Terminal for the controlled flow of current from the source to the drain.
  • SOURCE: Terminal for the input or output connection, depending on the application.
  • SOURCE (PAD): Exposed pad for thermal management and improved electrical performance.

What are the Pros and Cons of HUF75645S3ST?

Pros:

  • High Power Handling: Designed to handle high voltage and high current, suitable for power applications.
  • Low On-Resistance: Contributes to low power dissipation and efficient power management.
  • Fast Switching: Enables high-performance operation and fast response times.
  • Thermal Performance: The TO-263 package with an exposed pad allows for effective thermal management.

Cons:

  • Drive Requirements: May require proper drive circuitry for optimal performance and reliability.
  • Gate Voltage Limitation: Care should be taken to stay within the specified gate-source voltage limits.

Are There Any Equivalents/Alternatives to HUF75645S3ST for Recommendation?

  • The IPP60R190C6 from Infineon and the STP80NF70 from STMicroelectronics are alternatives with similar specifications.
  • An equivalent part to the HUF75645S3ST is the SIHP26N60E-GE3 from Vishay.

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