H27U1G8F2BTR-BC
H27U1G8F2BTR-BC is a NAND flash memory chipH27U1G8F2BTR-BC
H27U1G8F2BTR-BC is a NAND flash memory chip
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Service & Packaging
Service & Packaging
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All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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H27U1G8F2BTR-BC DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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H27U1G8F2BTR-BC Details
When it comes to mobile devices and embedded systems, the H27U1G8F2BTR-BC shines with its compact form factor and low power consumption. These features make it a key player in the world of portable electronics, offering designers the flexibility to create innovative products that deliver on both performance and efficiency. Whether you're designing a high-end smartphone or a cutting-edge tablet, this NAND flash memory chip has got you covered with its robust capabilities and reliable operation
Key Features
- Advanced Wear-Leveling Technology
- Fast Read/Write Operations Supported
- Multiple Sector-Erase Capability
Application
- Superior quality digital cameras
- Precision in GPS devices
- Seamless integration in portable media players
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.51 | Access Time-Max | 20 ns |
Command User Interface | YES | Data Polling | NO |
JESD-30 Code | R-PDSO-G48 | Memory Density | 1073741824 bit |
Memory IC Type | FLASH | Memory Width | 8 |
Number of Sectors/Size | 1K | Number of Terminals | 48 |
Number of Words | 134217728 words | Number of Words Code | 128000000 |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 128MX8 | Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP | Package Equivalence Code | TSSOP48,.8,20 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
Page Size | 2K words | Parallel/Serial | PARALLEL |
Power Supplies ! | 3/3.3 V | Qualification Status ! | Not Qualified |
Ready/Busy | YES | Sector Size | 128K |
Standby Current-Max | 0.00005 A | Supply Current-Max | 0.03 mA |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Form ! | GULL WING |
Terminal Pitch ! | 0.5 mm | Terminal Position | DUAL |
Toggle Bit | NO | Type | SLC NAND TYPE |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is H27U1G8F2BTR-BC?
The H27U1G8F2BTR-BC is a NAND Flash memory chip manufactured by SK Hynix. It is commonly used in various electronic devices such as smartphones, tablets, solid-state drives, and embedded systems to store data and program instructions.
How Does H27U1G8F2BTR-BC Work?
The H27U1G8F2BTR-BC works by storing data in a non-volatile manner using NAND Flash memory cells. It uses a floating gate transistor structure to trap charge, allowing data to be retained even when the power is removed. The chip communicates with a controller or processor to read, write, and erase data as needed.
How Many Pins does H27U1G8F2BTR-BC have and What are the Functions of the Pinout Configuration?
The H27U1G8F2BTR-BC is typically housed in a TSOP (Thin Small Outline Package) or other packaging types with a specific pinout configuration. The exact pinout configuration may vary, but typical functions of the pins include:
- VCC, VCCQ: Power supply pins for the core and I/O interface, respectively.
- CE: Chip enable or control enable pin.
- R/B: Ready/busy output pin for indicating the status of the memory chip.
- WE, RE: Write enable and read enable pins for controlling data transfers.
- IO0-IO7: I/O data pins for input and output operations.
- ALE, CLE: Address latch enable and command latch enable pins for controlling address and command inputs.
- WP: Write protect pin for hardware protection of write operations.
What are the Pros and Cons of H27U1G8F2BTR-BC?
Pros:
- High Storage Capacity: Offers high-density storage for a wide range of applications.
- Non-Volatile Memory: Retains data even when the power is turned off, suitable for mass storage.
- Fast Access Time: Provides relatively fast read and write access compared to traditional mechanical storage devices.
- Compact Form Factor: Compact package size enables integration into space-constrained designs.
Cons:
- Endurance and Retention: NAND Flash memory cells have limited program/erase cycles and may require wear-leveling algorithms for extended use.
- Complex Interface: Requires a controller or processor to manage data transfers and wear-leveling algorithms.
- Data Integrity: May require error correction and bad block management for data reliability.
- Performance Degradation: Speed and performance may degrade over time with extended use.
Are There Any Equivalents/Alternatives to H27U1G8F2BTR-BC for Recommendation?
Some equivalents or alternatives to the H27U1G8F2BTR-BC may include NAND Flash memory chips from other manufacturers such as Toshiba, Micron, or Samsung. Specific alternatives would depend on the exact requirements and specifications of the application.
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Price details
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