GS-065-008-6-L-MR

Name: GS-065-008-6-L-MR
Rating: 4.5 (10 reviews)
Author: Lisleapex

Increase power switching efficiency with low Rth(j-c) in 700V G4 PDFN

7,333 Effective Inventory

GS-065-008-6-L-MR

Effective Inventory7,333

Increase power switching efficiency with low Rth(j-c) in 700V G4 PDFN

Manufacturer Part # : GS-065-008-6-L-MR
Package/Case: PDFN-6
Brand: GaN Systems

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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GS-065-008-6-L-MR DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for GS-065-008-6-L-MR or email to us: Email: [email protected], we will contact you in 12 hours.

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GS-065-008-6-L-MR Details

The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

Key Features

700 V e-mode power transistor

850 V transient drain-to-source voltage

Bottom-cooled, small 5x6 mm PDFN package

R_DS(on) = 165 mΩ

I_DSmax,DC = 8.8 A /I_DSmax,Pulse = 14.8 A

Ultralow FOM

Gate drive requirements (0 V to 6 V)

High switching frequency (> 1 MHz)

Fast,controllable fall and rise times

Reverse conduction capability

Zero reverse recovery loss

Supports high operating frequency

Enables highest system efficiency

Enables ultra power density designs

Supports BOM cost savings

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category !	GaN FETs	Brand	GaN Systems
Channel Mode	Enhancement	Configuration	Single
Fall Time	8 ns	Id - Continuous Drain Current	8.8 A
Maximum Operating Frequency	> 1 MHz	Maximum Operating Temperature !	+ 150 C
Minimum Operating Frequency	0 Hz	Minimum Operating Temperature	- 55 C
Moisture Sensitive	Yes	Mounting Style	SMD/SMT
Number of Channels	1 Channel	Package / Case	PDFN-6
Product Type !	GaN FETs	Qg - Gate Charge	1.6 nC
Rds On - Drain-Source Resistance	235 mOhms	Rise Time !	4.8 ns
Factory Pack Quantity	250	Subcategory	Transistors
Technology	GaN-on-Si	Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	6 ns	Typical Turn-On Delay Time	2.4 ns
Vds - Drain-Source Breakdown Voltage	700 V	Vgs - Gate-Source Voltage	- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage	2.6 V