FDP2614
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ, 800-TUBEFDP2614
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ, 800-TUBE
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Manufacturer Part # : FDP2614
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Package/Case: TO-220-3
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
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Series : FDP26
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
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FDP2614 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $1.999 | $2.00 |
10 | $1.739 | $17.39 |
30 | $1.575 | $47.25 |
100 | $1.409 | $140.90 |
500 | $1.334 | $667.00 |
1000 | $1.301 | $1,301.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
FDP2614 Description
The FDP2614 is a robust Power Field-Effect Transistor (Power MOSFET) from ON Semiconductor, designed for reliable power switching in various applications. This device is ideal for high-power and high-current handling requirements, featuring low gate charge, fast switching speed, and high performance trench technology.
Pin Details
The FDP2614 is a N-channel Power MOSFET with 3 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- VCC: Positive Power Supply
- GND: Ground
- D: Drain (Output)
Features
- Low Gate Charge: Optimized for low gate charge, reducing power consumption and improving overall system efficiency.
- Fast Switching Speed: Enables fast switching speeds, ideal for high-frequency applications.
- High Performance Trench Technology: Provides extremely low RDS(on) and high current handling capability.
- High Power and Current Handling Capability: Suitable for demanding power switching applications.
Applications
The FDP2614 is commonly used in systems that require reliable power switching, such as motor drives, uninterruptible power supplies (UPS), and battery protection circuits.
Where to Use:
- Industrial automation systems
- Motor control applications
- Battery-powered devices
- Uninterruptible power supplies (UPS)
Manufacturer
The FDP2614 is manufactured by ON Semiconductor, a global leader in semiconductor technology. It falls under the category of Power MOSFETs, which are designed to facilitate reliable and efficient power switching in various applications.
Packages
The FDP2614 comes in an SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the Power MOSFET into electronic circuits.
Equivalent Parts of FDP2614
- FDP2615: A comparable Power MOSFET from ON Semiconductor with similar features and performance.
- FQP50N60C: An alternative Power MOSFET from Fairchild Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Avalanche Energy Rating (Eas) | 145 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 62 A | Drain Current-Max (ID) | 62 A |
Drain-source On Resistance-Max | 0.027 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 260 W |
Qualification Status ! | Not Qualified | Surface Mount ! | NO |
Terminal Finish | MATTE TIN | Terminal Form ! | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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