FDN361AN

Effective Inventory7,531

30V N-channel MOSFET with 1.8A current handling capability in SuperSOT housing, supplied on tape and reel

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Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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FDN361AN DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $0.247 $0.25
200 $0.096 $19.20
500 $0.092 $46.00
1000 $0.091 $91.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Interested Parts

Rapid Quote

Please submit RFQ for FDN361AN or email to us: Email: [email protected], we will contact you in 12 hours.

FDN361AN Details

The FDN361AN is a power MOSFET transistor designed for high-speed switching applications. This N-channel MOSFET offers low on-resistance and high current-carrying capability, making it suitable for power management and control circuits. It is housed in a compact and thermally efficient package, ensuring efficient heat dissipation in various electronic systems.

Pinout

  • 1 (G): Gate
  • 2 (D): Drain
  • 3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-Resistance: Provides efficient power management with minimal voltage drops.
  • High Current-Carrying Capability: Capable of handling high currents for robust performance.
  • Fast Switching Speed: Ideal for high-speed switching applications.
  • Compact Package: Housed in a compact package for space-saving designs.
  • Thermally Efficient: Designed for efficient heat dissipation to prevent overheating.

Application

  • Power Management: Suitable for power management circuits requiring high-speed switching.
  • Motor Control: Used in motor control applications for efficient power delivery.
  • DC-DC Converters: Ideal for DC-DC converter circuits for voltage regulation.

Where to Use

The FDN361AN is recommended for applications that demand efficient power management and high-speed switching capabilities. It is commonly employed in power supplies, motor control systems, and DC-DC converters for reliable performance.

How to Use

Connect the FDN361AN in your circuit by wiring the Gate, Drain, and Source pins accordingly. Ensure proper voltage and current ratings are observed to prevent damage. Use appropriate heat sinking techniques to maintain optimal performance. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the FDN361AN showcases the proper connections and layout for integrating the MOSFET into your electronic system. It includes the necessary connections for gate control, power input, and output, ensuring efficient power switching.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IRF3205: A similar power MOSFET with comparable specifications and performance.
  • STP80NF70: An alternative N-channel MOSFET offering similar characteristics.

Complementary

The FDN361AN can be complemented by the FDN337N, which provides enhanced power handling capabilities for more demanding applications requiring higher current ratings and lower on-resistance.

When selecting complementary components, ensure compatibility and performance alignment with your specific application requirements.

Frequently Asked Questions

Q: What is the maximum current rating of the FDN361AN?

A: The FDN361AN can handle currents up to the specified rating. Be sure to operate within the recommended limits for reliable performance.

Q: Can the FDN361AN be used in high-frequency applications?

A: Yes, the FDN361AN is suitable for high-speed switching applications due to its fast switching speed and low on-resistance characteristics.

FDN361AN

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SSOT-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.8 A Rds On - Drain-Source Resistance 72 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 11 ns
Forward Transconductance - Min 5 S Height 1.12 mm
Length 2.9 mm Product MOSFET Small Signal
Product Type ! MOSFET Rise Time ! 11 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 7 ns Typical Turn-On Delay Time 3 ns
Width 1.4 mm Part # Aliases FDN361AN_NL
Unit Weight 0.001058 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification FDN361AN PDF Download

FAQs

What is FDN361AN?

The FDN361AN is a small signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Fairchild Semiconductor. It is ideal for use in low voltage, low power applications such as battery management, power switches, and small signal amplification.

How Does FDN361AN Work?

The FDN361AN operates as a low voltage, low power MOSFET, providing efficient switching and amplification of small signals. It features a compact design and low gate threshold voltage, making it suitable for portable and low power devices.

How Many Pins does FDN361AN have and What are the Functions of the Pinout Configuration?

The FDN361AN is housed in a compact SOT-23 package. The pinout configuration includes:

  • G (or GATE): Gate terminal for controlling the MOSFET.
  • D (or DRAIN): Drain terminal for the MOSFET, which is the main current carrying terminal.
  • S (or SOURCE): Source terminal for the MOSFET, connected to the ground or the common terminal.

What are the Pros and Cons of FDN361AN?

Pros:

  • Low Voltage Operation: Ideal for low voltage applications.
  • Compact Size: The SOT-23 package is space-efficient and suitable for compact designs.
  • Low Gate Threshold Voltage: Enables efficient switching at low power levels.
  • Low Power Consumption: Suited for battery-powered devices and low power applications.

Cons:

  • Current Limitations: May not be suitable for high current applications.
  • Temperature Sensitivity: Performance may be sensitive to temperature variations.

Are There Any Equivalents/Alternatives to FDN361AN for Recommendation?

  • The SI2305DS from Vishay and the 2N7002 from ON Semiconductor are alternatives to the FDN361AN for small signal MOSFET applications.

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