FDN361AN
30V N-channel MOSFET with 1.8A current handling capability in SuperSOT housing, supplied on tape and reelFDN361AN
30V N-channel MOSFET with 1.8A current handling capability in SuperSOT housing, supplied on tape and reel
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Manufacturer Part # : FDN361AN
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Package/Case: SSOT-3
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Part Status : Discontinued
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
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Series : FDN361
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray
FDN361AN DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $0.247 | $0.25 |
200 | $0.096 | $19.20 |
500 | $0.092 | $46.00 |
1000 | $0.091 | $91.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
FDN361AN Details
The FDN361AN is a power MOSFET transistor designed for high-speed switching applications. This N-channel MOSFET offers low on-resistance and high current-carrying capability, making it suitable for power management and control circuits. It is housed in a compact and thermally efficient package, ensuring efficient heat dissipation in various electronic systems.
Pinout
- 1 (G): Gate
- 2 (D): Drain
- 3 (S): Source
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low On-Resistance: Provides efficient power management with minimal voltage drops.
- High Current-Carrying Capability: Capable of handling high currents for robust performance.
- Fast Switching Speed: Ideal for high-speed switching applications.
- Compact Package: Housed in a compact package for space-saving designs.
- Thermally Efficient: Designed for efficient heat dissipation to prevent overheating.
Application
- Power Management: Suitable for power management circuits requiring high-speed switching.
- Motor Control: Used in motor control applications for efficient power delivery.
- DC-DC Converters: Ideal for DC-DC converter circuits for voltage regulation.
Where to Use
The FDN361AN is recommended for applications that demand efficient power management and high-speed switching capabilities. It is commonly employed in power supplies, motor control systems, and DC-DC converters for reliable performance.
How to Use
Connect the FDN361AN in your circuit by wiring the Gate, Drain, and Source pins accordingly. Ensure proper voltage and current ratings are observed to prevent damage. Use appropriate heat sinking techniques to maintain optimal performance. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the FDN361AN showcases the proper connections and layout for integrating the MOSFET into your electronic system. It includes the necessary connections for gate control, power input, and output, ensuring efficient power switching.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- IRF3205: A similar power MOSFET with comparable specifications and performance.
- STP80NF70: An alternative N-channel MOSFET offering similar characteristics.
Complementary
The FDN361AN can be complemented by the FDN337N, which provides enhanced power handling capabilities for more demanding applications requiring higher current ratings and lower on-resistance.
When selecting complementary components, ensure compatibility and performance alignment with your specific application requirements.
Frequently Asked Questions
Q: What is the maximum current rating of the FDN361AN?
A: The FDN361AN can handle currents up to the specified rating. Be sure to operate within the recommended limits for reliable performance.
Q: Can the FDN361AN be used in high-frequency applications?
A: Yes, the FDN361AN is suitable for high-speed switching applications due to its fast switching speed and low on-resistance characteristics.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SSOT-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 1.8 A | Rds On - Drain-Source Resistance | 72 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 500 mW |
Channel Mode | Enhancement | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 11 ns |
Forward Transconductance - Min | 5 S | Height | 1.12 mm |
Length | 2.9 mm | Product | MOSFET Small Signal |
Product Type ! | MOSFET | Rise Time ! | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 7 ns | Typical Turn-On Delay Time | 3 ns |
Width | 1.4 mm | Part # Aliases | FDN361AN_NL |
Unit Weight | 0.001058 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is FDN361AN?
The FDN361AN is a small signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Fairchild Semiconductor. It is ideal for use in low voltage, low power applications such as battery management, power switches, and small signal amplification.
How Does FDN361AN Work?
The FDN361AN operates as a low voltage, low power MOSFET, providing efficient switching and amplification of small signals. It features a compact design and low gate threshold voltage, making it suitable for portable and low power devices.
How Many Pins does FDN361AN have and What are the Functions of the Pinout Configuration?
The FDN361AN is housed in a compact SOT-23 package. The pinout configuration includes:
- G (or GATE): Gate terminal for controlling the MOSFET.
- D (or DRAIN): Drain terminal for the MOSFET, which is the main current carrying terminal.
- S (or SOURCE): Source terminal for the MOSFET, connected to the ground or the common terminal.
What are the Pros and Cons of FDN361AN?
Pros:
- Low Voltage Operation: Ideal for low voltage applications.
- Compact Size: The SOT-23 package is space-efficient and suitable for compact designs.
- Low Gate Threshold Voltage: Enables efficient switching at low power levels.
- Low Power Consumption: Suited for battery-powered devices and low power applications.
Cons:
- Current Limitations: May not be suitable for high current applications.
- Temperature Sensitivity: Performance may be sensitive to temperature variations.
Are There Any Equivalents/Alternatives to FDN361AN for Recommendation?
- The SI2305DS from Vishay and the 2N7002 from ON Semiconductor are alternatives to the FDN361AN for small signal MOSFET applications.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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