FCB36N60NTM

Name: FCB36N60NTM
Brand: Onsemi
Rating: 4.5 (10 reviews)
Author: Lisleapex

MOSFET 600V NChannel MOSFET SupreMOST

3,442 Effective Inventory

FCB36N60NTM

Effective Inventory3,442

MOSFET 600V NChannel MOSFET SupreMOST

Manufacturer Part # : FCB36N60NTM
Package/Case: SC-70-3
Brand: Onsemi
Product Categories : Single FETs, MOSFETs

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FCB36N60NTM DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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FCB36N60NTM Details

The FCB36N60NTM is a power MOSFET transistor designed for high-voltage and high-current applications. This device offers low on-state resistance and high switching speed, making it suitable for power supplies, motor control, and inverters. It is housed in a TO-263 package, providing efficient thermal dissipation in various circuit designs.

Pinout

1 (G): Gate
2 (D): Drain
3 (S): Source

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Voltage Capability: Designed for high-voltage applications.
Low On-State Resistance: Provides efficient power dissipation and minimal voltage drop.
Fast Switching Speed: Enables high-frequency operation in switching circuits.
TO-263 Package: Offers enhanced thermal performance for reliable operation.

Application

Power Supplies: Ideal for use in power supply circuits requiring high efficiency.
Motor Control: Suitable for motor control applications due to its high current capability.
Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Where to Use

The FCB36N60NTM is recommended for applications where high voltage and current capabilities are required, such as power supplies, motor control, and inverter systems. Its low on-state resistance and fast switching speed make it a reliable choice for high-power electronic designs.

How to Use

Connect the FCB36N60NTM to your circuit by wiring the Gate, Drain, and Source pins accordingly. Ensure proper heat sinking and thermal management to maximize performance and reliability. Follow the recommended operating conditions and drive requirements specified in the datasheet for optimal operation.

Application Circuit

The application circuit diagram for the FCB36N60NTM demonstrates how to integrate the power MOSFET into your circuit for efficient power control and management. Proper connections and layout considerations are essential for achieving optimal performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

IRF3205: A comparable power MOSFET with similar specifications and performance characteristics.
FDP7030BL: An alternative MOSFET offering equivalent power handling capabilities.

Complementary

The FCB36N60NTM can be paired with the FCB20N60TM, which provides complementing characteristics for improved power management and efficiency in high-power applications.

Ensure compatibility and adequate drive circuitry when combining multiple power MOSFETs in a circuit for optimal performance.

Frequently Asked Questions

Q: What is the maximum voltage rating of the FCB36N60NTM?

A: The FCB36N60NTM has a maximum voltage rating of [insert voltage rating here]. Refer to the datasheet for specific ratings and limitations.

Q: Can the FCB36N60NTM be used in high-frequency switching applications?

A: Yes, the FCB36N60NTM's fast switching speed makes it suitable for high-frequency switching circuits. Ensure proper drive circuit design for efficient operation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status	Last Shipments	Compliance	PbAHP
Package Type	D2PAK-3 / TO-263-2	Case Outline	418AJ
MSL Type	1	MSL Temp (°C)	245
Container Type	REEL	Container Qty.	800
ON Target	N	Channel Polarity	N-Channel
Configuration	Single	V(BR)DSS Min (V)	600
VGS Max (V)	±30	VGS(th) Max (V)	4
ID Max (A)	36	PD Max (W)	312
RDS(on) Max @ VGS = 10 V (mΩ)	125	Qg Typ @ VGS = 10 V (nC)	86
Ciss Typ (pF)	3595	Pricing ($/Unit)	Price N/A

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification FCB36N60NTM PDF Download

FAQs

What is FCB36N60NTM?

The FCB36N60NTM is a 600V, 72A N-channel IGBT (Insulated Gate Bipolar Transistor) designed by Fairchild Semiconductor. It is suitable for high power switching applications such as motor control, power supplies, and inverters.

How Does FCB36N60NTM Work?

The FCB36N60NTM operates as a high-power switch, allowing large currents and high voltages to be controlled by a small signal. It utilizes the combination of MOSFET and BJT (Bipolar Junction Transistor) structures to provide high input impedance and low on-state voltage drop for efficient power switching.

How Many Pins does FCB36N60NTM have and What are the Functions of the Pinout Configuration?

The FCB36N60NTM is housed in a TO-263-3 package. The pinout configuration includes:

Collector (C): High-voltage terminal connected to the collector of the internal BJT.
Gates (G): Control terminals for the IGBT's MOSFET structure.
Emitter (E): Output terminal connected to the emitter of the internal BJT.

What are the Pros and Cons of FCB36N60NTM?

Pros:

High Voltage and Current Capability: Suitable for high-power applications requiring large currents and high voltages.
Fast Switching Speed: Capable of fast turn-on and turn-off times for efficient power control.
Low Saturation Voltage: Provides low on-state voltage drop to minimize power dissipation.
Robustness: Designed to handle high power levels and transient stresses.

Cons:

Gate Drive Complexity: Requires careful attention to gate drive considerations for optimal performance.
Switching Noise: May generate electromagnetic interference (EMI) due to high current and voltage switching.
Heat Dissipation: High power levels may require efficient thermal management.