DS1220Y-200+
Experience reliable data retention and fast read/write speeds with the DS1220Y-200+ non-volatile SRAM moduleDS1220Y-200+
Experience reliable data retention and fast read/write speeds with the DS1220Y-200+ non-volatile SRAM module
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Manufacturer Part # : DS1220Y-200+
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Package/Case: EDIP-24
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Brand: Maxim Integrated
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Product Categories : Memory
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Series : DS1220Y
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Service & Packaging
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DS1220Y-200+ DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $22.929 | $22.93 |
196 | $9.148 | $1,793.01 |
504 | $8.844 | $4,457.38 |
994 | $8.692 | $8,639.85 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
DS1220Y-200+ Details
The DS1220Y-200+ is a non-volatile static RAM (NVSRAM) with a capacity of 16K (2K x 8) bits, offering unlimited write cycles with a minimum data retention of 10 years. This device is intended for use in applications requiring both non-volatility and fast read/write access.
Pinout
- VCC (1): Positive Power Supply
- GND (2): Ground
- A (3): Non-inverting Input/Output
- B (4): Inverting Input/Output
- WP (5): Write Protect
- RST (6): Reset
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Non-Volatile Static RAM (NVSRAM): Offers unlimited write cycles with a minimum data retention of 10 years.
- 16K (2K x 8) bits Capacity: Provides sufficient storage for various applications.
- Fast Read/Write Access: Enables quick and reliable data transfer.
Applications
- Embedded Systems: Suitable for use in various embedded systems requiring non-volatile memory.
- Industrial Control Systems: Can be used in industrial control systems where data retention is crucial.
- Aerospace and Defense Applications: Offers reliable storage solutions for aerospace and defense applications.
Where to Use
The DS1220Y-200+ can be used in various applications where non-volatile memory is required, such as:
- Embedded systems
- Industrial control systems
- Aerospace and defense applications
How to Use
To use the DS1220Y-200+, follow these steps:
- Connect the VCC pin to a positive power supply.
- Connect the GND pin to ground.
- Apply a write protect signal to the WP pin to prevent accidental writes.
- Reset the device by applying a reset signal to the RST pin.
Application Circuit
The application circuit diagram for the DS1220Y-200+ illustrates how to connect the device to your system. It includes connections for power supply, ground, and input/output signals, ensuring proper operation and reliable data transfer.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- DS1220Y-100+: A similar NVSRAM with a lower capacity but equivalent features.
- DS1220Y-400+: A higher-capacity NVSRAM offering more storage for demanding applications.
Complementary
The DS1220Y-200+ can be complemented by other memory devices, such as:
- SRAM (Static RAM): Provides fast and volatile storage for temporary data.
- Flash Memory: Offers non-volatile storage with higher capacity and faster erase times.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | NVRAM | RoHS | Details |
Package / Case | EDIP-24 | Interface Type | Parallel |
Memory Size ! | 16 kbit | Organization | 2 k x 8 |
Data Bus Width | 8 bit | Access Time | 200 ns |
Supply Voltage - Max | 5.5 V | Supply Voltage - Min | 4.5 V |
Operating Supply Current | 75 mA | Minimum Operating Temperature | 0 C |
Maximum Operating Temperature ! | + 70 C | Series | DS1220Y |
Brand | Analog Devices / Maxim Integrated | Height | 10.67 mm |
Length | 38.1 mm | Mounting Style | Through Hole |
Operating Supply Voltage ! | 5 V | Product Type ! | NVRAM |
Factory Pack Quantity | 14 | Subcategory | Memory & Data Storage |
Type | NVSRAM | Width | 18.29 mm |
Part # Aliases | DS1220Y 90-1220Y+000 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is DS1220Y-200+?
The DS1220Y-200+ is a nonvolatile static RAM (NVSRAM) module designed by Maxim Integrated. It combines the benefits of both volatile and nonvolatile memories, offering data retention even when power is removed. The DS1220Y-200+ is ideal for applications requiring data storage with battery backup, such as real-time clocks, industrial automation, and network routers.
How Does DS1220Y-200+ Work?
The DS1220Y-200+ operates by utilizing a nonvolatile ferroelectric random access memory (FeRAM) cell technology to store data even without power. It includes a lithium energy source for backup power, ensuring data integrity during power loss scenarios. The chip allows for read and write operations similar to a conventional SRAM while providing nonvolatile storage capabilities.
How Many Pins does DS1220Y-200+ have and What are the Functions of the Pinout Configuration?
The DS1220Y-200+ is housed in a 24-pin DIP (Dual Inline Package) package. The pinout configuration includes:
- VCC: Power supply pin.
- GND: Ground pin.
- CE: Chip enable pin.
- O0-O7: Data input/output pins.
- A0-A12: Address input pins.
- PWROK: Power OK output pin.
- BYTE: Byte control pin.
What are the Pros and Cons of DS1220Y-200+?
Pros:
- Nonvolatile Memory: Provides data retention without power, offering reliability in critical applications.
- High Speed: Operates at speeds comparable to standard SRAM, ensuring fast access times.
- Battery Backup: Includes a built-in lithium energy source for seamless data protection during power failures.
- High Endurance: Offers a high number of read/write cycles for long-lasting data storage.
- Wide Temperature Range: Suitable for operation in harsh environments with its extended temperature range.
Cons:
- Higher Cost: NVSRAM modules like the DS1220Y-200+ may be more expensive than traditional SRAM.
- Complexity: Requires careful handling of backup power and memory management for optimal performance.
- Limited Capacity: May have limited storage capacity compared to other nonvolatile memory options.
Are There Any Equivalents/Alternatives to DS1220Y-200+ for Recommendation?
- The CY14B101Q from Cypress Semiconductor is a comparable NVSRAM module with similar features.
- Alternatives to the DS1220Y-200+ include the FM25V20-G from Cypress Semiconductor and the MR25H256ACDF from Renesas Electronics.
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Price details
Prices listed do not include VAT.
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