DMG1016UDW-7

Effective Inventory6,474

1.066A I(D), 20V

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DMG1016UDW-7 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
3000 $0.034 $102.00
6000 $0.032 $192.00
10 $0.045 $0.45
100 $0.039 $3.90
300 $0.036 $10.80
9000 $0.031 $279.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for DMG1016UDW-7 or email to us: Email: [email protected], we will contact you in 12 hours.

DMG1016UDW-7 Details

The DMG1016UDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-performance power switching applications. This MOSFET offers low on-resistance and fast switching characteristics, making it ideal for use in power supplies, motor control circuits, and other high-current applications. It is housed in a compact and thermally efficient package, ensuring reliable operation and optimal power dissipation.

Pinout

  • 1 (Gate 1): Gate Terminal for MOSFET 1
  • 2 (Drain 1): Drain Terminal for MOSFET 1
  • 3 (Source 1): Source Terminal for MOSFET 1
  • 4 (Gate 2): Gate Terminal for MOSFET 2
  • 5 (Drain 2): Drain Terminal for MOSFET 2
  • 6 (Source 2): Source Terminal for MOSFET 2

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-Resistance: Provides minimal resistance for efficient power switching.
  • Fast Switching: Offers fast turn-on and turn-off characteristics for improved performance.
  • Dual N-Channel Configuration: Features two independent N-channel MOSFETs for enhanced versatility.
  • Compact and Thermally Efficient Package: Housed in a small package design with efficient thermal dissipation for reliable operation.
  • Wide Operating Voltage Range: Suited for a wide range of operating voltages, enhancing compatibility with various circuit designs.

Application

  • Power Supplies: Ideal for power supply circuits, ensuring efficient power conversion and delivery.
  • Motor Control: Used in motor control circuits for precise and reliable control of motor speed and direction.
  • High-Current Applications: Suitable for high-current applications such as LED lighting, battery management, and DC-DC converters.

Where to Use

The DMG1016UDW-7 is suitable for use in power switching applications that require low on-resistance and fast switching characteristics. It is commonly used in power supplies, motor control circuits, and high-current applications for efficient and reliable performance.

How to Use

To use the DMG1016UDW-7, connect the Gate 1, Drain 1, and Source 1 pins to the corresponding terminals of MOSFET 1. Similarly, connect the Gate 2, Drain 2, and Source 2 pins to the corresponding terminals of MOSFET 2. Ensure proper power supply connections and consider thermal management for optimal performance. For detailed usage instructions, refer to the datasheet.

Equivalents

  • DMG1012UDW: Another dual N-channel MOSFET from Diodes Incorporated with similar characteristics and performance.
  • IRF540N: An alternative dual MOSFET from Infineon Technologies offering comparable features and functionality.

Complementary

The DMG1016UDW-7 can be complemented by the DMG2302U-7, a low threshold N-channel MOSFET also from Diodes Incorporated. The DMG2302U-7 can provide level shifting capabilities and enhance the versatility of the circuit design. When selecting complementary MOSFETs, ensure compatibility and match the specifications to meet your application requirements.

Frequently Asked Questions

Q: What is the maximum operating voltage of the DMG1016UDW-7?

A: The DMG1016UDW-7 can operate at a maximum voltage specified in the datasheet. Please refer to the datasheet for detailed operating voltage information under specific conditions and limitations.

Q: Can the DMG1016UDW-7 be used for high-frequency applications?

A: Yes, the DMG1016UDW-7 can be used for high-frequency applications thanks to its fast switching characteristics and compact design. However, it's important to consider package characteristics and layout considerations for optimal performance.

DMG1016UDW-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.066 A, 845 mA Rds On - Drain-Source Resistance 450 mOhms, 750 mOhms
Vgs - Gate-Source Voltage - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 736.6 nC, 622.4 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 330 mW
Channel Mode Enhancement Series DMG1016
Brand Diodes Incorporated Configuration Dual
Fall Time 12.3 ns, 20.72 ns Product MOSFET Small Signals
Product Type ! MOSFET Rise Time ! 7.4 ns, 8.1 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 26.7 ns, 28.4 ns
Typical Turn-On Delay Time 5.1 ns, 5.1 ns Unit Weight 0.000265 oz

FAQs

What is DMG1016UDW-7?

The DMG1016UDW-7 is a dual N-channel enhancement mode MOSFET designed by Diodes Incorporated. It is commonly used for power management applications in various electronic devices, such as voltage regulators, DC-DC converters, and motor control circuits.

How Does DMG1016UDW-7 Work?

The DMG1016UDW-7 operates as a switch in electronic circuits, controlling the flow of current based on the voltage applied to its gate terminal. As an enhancement mode MOSFET, it requires a positive voltage at the gate to turn on and allow current to flow between the source and drain terminals. It efficiently handles power distribution and switching tasks in different applications.

How Many Pins does DMG1016UDW-7 have and What are the Functions of the Pinout Configuration?

The DMG1016UDW-7 is housed in a PowerDI 3333 package with 8 pins. The pinout configuration includes:

  • GATE1, GATE2: Gate terminals for the two N-channel MOSFETs.
  • SOURCE1, SOURCE2: Source terminals for the two MOSFETs.
  • DRAIN1, DRAIN2: Drain terminals for the two MOSFETs.
  • VSS: Substrate connection for improved performance.

What are the Pros and Cons of DMG1016UDW-7?

Pros:

  • High Power Handling: Capable of efficiently switching high currents in power management circuits.
  • Enhancement Mode: Easy to control with positive gate voltage, simplifying circuit design.
  • Low On-Resistance: Minimizes power loss and improves efficiency during operation.
  • Dual MOSFETs: Suitable for applications requiring independent control of two channels.
  • Compact Package: The PowerDI 3333 package offers space-saving advantages.

Cons:

  • Gate Voltage Requirement: Being enhancement mode MOSFETs, they require a positive voltage to turn on, which may need additional circuitry for control.
  • Heat Dissipation: High power handling may lead to heat generation, requiring proper thermal management.
  • Complexity in Drive Circuitry: Design considerations are needed for gate driving circuits to ensure proper switching behavior.

Are There Any Equivalents/Alternatives to DMG1016UDW-7 for Recommendation?

  • An equivalent part to the DMG1016UDW-7 is the SI3443DV-T1-GE3 from Vishay.
  • Alternative MOSFETs similar to the DMG1016UDW-7 include the IRFR024N from Infineon and the NTMFS4935NT1G from ON Semiconductor.

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