CY7C136E-55NXC

SRAM PQFP-52 CY7C136E-55NXC ROHS
5,369 Effective Inventory

CY7C136E-55NXC

Effective Inventory5,369

SRAM PQFP-52 CY7C136E-55NXC ROHS

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Service & Packaging

Service & Packaging

About After Sales Service

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CY7C136E-55NXC DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $33.549 $33.55
192 $13.386 $2,570.11
480 $12.939 $6,210.72
960 $12.718 $12,209.28

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Rapid Quote

Please submit RFQ for CY7C136E-55NXC or email to us: Email: [email protected], we will contact you in 12 hours.

CY7C136E-55NXC Details

The CY7C136E-55NXC is a high-speed 16K x 9 dual-port static RAM (DPRAM) from Cypress Semiconductor, designed for use in demanding data buffering and communication applications. This DPRAM offers a fast access time of 55ns, making it suitable for high-performance systems where quick data transfer is essential. With a 5V power supply and a compact package, the CY7C136E-55NXC provides reliable and efficient memory storage capabilities.

Pinout

  • 1 (GND): Ground
  • 2 (A0-A13): Address Inputs
  • 3 (BYTE): Byte Write Enable
  • 4 (OE): Output Enable
  • 5 (WE): Write Enable
  • 6 (CS1, CS2): Chip Select
  • 7 (D0-D7): Data Inputs/Outputs Port A
  • 8 (D8-D15): Data Inputs/Outputs Port B
  • 9 (VCC): Positive Power Supply (5V)

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Access: Offers fast access time of 55ns for quick data retrieval.
  • Dual-Port Design: Features dual-port architecture for simultaneous read and write operations.
  • Wide Operating Voltage: Operates at a nominal voltage of 5V for compatibility with standard systems.
  • Compact Package: Housed in a compact form factor for space-efficient integration.
  • Non-Volatile Storage: Retains data without power, ensuring data integrity in case of power loss.

Application

  • Data Buffering: Ideal for data buffering applications where quick and efficient data storage is required.
  • Communication Systems: Used in communication systems for reliable data transfer and storage.
  • Embedded Control: Suitable for embedded control systems that require high-speed memory access.

Where to Use

The CY7C136E-55NXC is well-suited for applications demanding high-speed and reliable memory storage, such as data buffering in communication systems and embedded control applications. Its dual-port design enables simultaneous read and write operations, making it versatile for various data handling tasks.

How to Use

Integrate the CY7C136E-55NXC into your system by connecting the address, data, and control lines according to the recommended configuration. Ensure proper power supply connections and adhere to timing specifications for reliable operation. Refer to the datasheet for detailed usage instructions and timing diagrams.

Application Circuit

The application circuit diagram for the CY7C136E-55NXC illustrates how to connect the DPRAM to your system, including address, data, and control signal connections. Proper circuit design is essential for optimal performance and data integrity.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • CY7C136E-55NI: A similar high-speed 16K x 9 dual-port static RAM with interchangeability in most applications.
  • AS6C4008: An alternative static RAM device with comparable features and functionality.

Complementary

The CY7C136E-55NXC can be complemented by the CY7C1399B, a complementary dual-port RAM with extended capacity and enhanced features, suitable for larger data storage and processing requirements.

When pairing complementary memory devices, ensure compatibility and synchronization for seamless data handling and system operation.

Frequently Asked Questions

Q: What is the access time of the CY7C136E-55NXC?

A: The CY7C136E-55NXC offers a fast access time of 55ns, enabling quick data retrieval and transfer operations within the memory array.

Q: Can the CY7C136E-55NXC be used in battery-operated devices?

A: Yes, the CY7C136E-55NXC operates at a nominal voltage of 5V, making it compatible with standard battery-operated systems requiring high-speed memory storage.

CY7C136E-55NXC

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 16 kbit Organization 2 k x 8
Access Time 55 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Supply Current - Max 160 mA Minimum Operating Temperature 0 C
Maximum Operating Temperature ! + 70 C Mounting Style SMD/SMT
Package / Case PQFP-52 Brand Infineon Technologies
Memory Type ! SDR Moisture Sensitive Yes
Product Type ! SRAM Series CY7C136E
Factory Pack Quantity 96 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.017496 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C136E-55NXC PDF Download

FAQs

What is CY7C136E-55NXC?

The CY7C136E-55NXC is a high-speed 9 Kb CMOS static RAM (SRAM) designed by Cypress Semiconductor. It offers fast access times and low power consumption, making it suitable for various applications in the electronics industry.

How Does CY7C136E-55NXC Work?

The CY7C136E-55NXC functions as a static RAM, storing data as long as power is supplied. It utilizes CMOS technology to provide high-speed access and low power consumption compared to dynamic RAM. The device maintains data integrity without the need for refreshing, offering fast and reliable data storage.

How Many Pins does CY7C136E-55NXC have and What are the Functions of the Pinout Configuration?

The CY7C136E-55NXC is housed in a 28-pin DIP (Dual In-Line Package) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • A0-A8: Address input pins.
  • CE1, CE2: Chip enable inputs.
  • OE: Output enable input.
  • WE: Write enable input.
  • I/O0-I/O7: Data input/output pins.

What are the Pros and Cons of CY7C136E-55NXC?

Pros:

  • High Speed: Offers fast access times for quick data retrieval.
  • Low Power Consumption: Operates with low power requirements, ideal for energy-efficient designs.
  • Reliability: Static RAM design ensures data integrity without the need for refreshing.
  • Easy Integration: Standard interface and pinout make it easy to integrate into existing systems.
  • Wide Operating Voltage Range: Can operate over a range of supply voltages.

Cons:

  • Cost: SRAM devices like CY7C136E-55NXC may be more expensive than alternative memory technologies.
  • Capacity: Limited storage capacity compared to modern flash memory technologies.
  • Volatility: Data is lost when power is removed, unlike non-volatile memory options.

Are There Any Equivalents/Alternatives to CY7C136E-55NXC for Recommendation?

  • The CY7C185 from Cypress Semiconductor is a similar CMOS 8 Kb SRAM with comparable features.
  • Alternatives to the CY7C136E-55NXC include the AS6C1008 from Alliance Memory and the 62C256 from ISSI.

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