CY7C1061DV33-10ZSXI

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3,590 Effective Inventory

CY7C1061DV33-10ZSXI

Effective Inventory3,590

Stocked and ready for same-day shipping

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CY7C1061DV33-10ZSXI DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $3.837 $3.84
200 $1.485 $297.00
500 $1.432 $716.00
1000 $1.407 $1,407.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for CY7C1061DV33-10ZSXI or email to us: Email: [email protected], we will contact you in 12 hours.

CY7C1061DV33-10ZSXI Details

The CY7C1061DV33-10ZSXI is a high-speed synchronous SRAM module from Cypress Semiconductor, offering fast and reliable data storage for various electronic applications. This module features a storage capacity of 64Mbit and operates at a speed of 10ns, making it suitable for demanding memory requirements in advanced systems.

Pinout

  • 1 (WE): Write Enable
  • 2 (OE): Output Enable
  • 3-33 (A0-A10): Address Inputs
  • 34-55 (DQ0-DQ21): Data Inputs/Outputs
  • 56 (CE1): Chip Enable
  • 57 (CE2): Chip Enable
  • 58 (CE2): Chip Enable
  • 59 (CE2): Chip Enable
  • 60 (CE2): Chip Enable
  • 61 (CLK): Clock Input
  • 62 (BYTE): Byte Data Input/Output
  • 63 (ZZ): No Connection
  • 64 (VCC): Positive Power Supply
  • 65 (VSS): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Operation: Operates at a speed of 10ns for fast data access.
  • Large Capacity: Provides a storage capacity of 64Mbit for data-intensive applications.
  • Synchronous Interface: Utilizes a synchronous interface for efficient data transfer.
  • Low Power Consumption: Designed for low power consumption, ideal for battery-powered devices.
  • Wide Operating Voltage: Supports a wide operating voltage range for versatility in different systems.

Application

  • Networking Equipment: Suitable for use in networking devices requiring fast and reliable memory storage.
  • Telecommunication Systems: Used in telecommunication systems for data processing and buffering.
  • Industrial Control: Ideal for industrial control systems that demand high-speed data access.

Where to Use

The CY7C1061DV33-10ZSXI is ideal for applications that require high-speed and efficient data storage capabilities. It is commonly utilized in networking equipment, telecommunication systems, and industrial control applications where reliable memory performance is essential.

How to Use

Integrate the CY7C1061DV33-10ZSXI into your system by connecting the address, data, control, and power supply pins as per the datasheet recommendations. Ensure proper timing considerations for synchronous operation and adhere to voltage requirements for optimal performance. Refer to the datasheet for detailed setup and operational guidelines.

Application Circuit

The application circuit diagram for the CY7C1061DV33-10ZSXI illustrates the connection scheme for integrating the synchronous SRAM module into a system. It includes connections for address inputs, data inputs/outputs, control signals, and power supply, ensuring correct functionality and data integrity.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • MT45W2MW16P: A similar synchronous SRAM module offering comparable performance.
  • AS7C4096A: An alternative high-speed SRAM module with equivalent specifications.

Complementary

The CY7C1061DV33-10ZSXI can be paired with the CY7C1041DV33-10ZSXI, a compatible SRAM module providing additional memory capacity for larger storage requirements. Ensure compatibility and consider system requirements when choosing complementary memory modules.

When selecting complementary components, verify compatibility and performance specifications to achieve seamless integration and enhanced system functionality.

Frequently Asked Questions

Q: What is the operating speed of the CY7C1061DV33-10ZSXI?

A: The CY7C1061DV33-10ZSXI operates at a speed of 10 nanoseconds for quick data access and processing.

Q: Can the CY7C1061DV33-10ZSXI be used in battery-powered devices?

A: Yes, the low power consumption design of the CY7C1061DV33-10ZSXI makes it suitable for use in battery-powered devices where energy efficiency is crucial.

CY7C1061DV33-10ZSXI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 16 Mbit Organization 1 M x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 175 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Mounting Style SMD/SMT
Package / Case TSOP-54 Brand Infineon Technologies
Memory Type ! SDR Moisture Sensitive Yes
Product Type ! SRAM Series CY7C1061DV33
Factory Pack Quantity 108 Subcategory Memory & Data Storage
Type Asynchronous

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1061DV33-10ZSXI PDF Download

FAQs

What is CY7C1061DV33-10ZSXI?

The CY7C1061DV33-10ZSXI is a high-performance synchronous SRAM (Static Random-Access Memory) device designed by Cypress Semiconductor. It is ideal for applications requiring fast, non-volatile data storage and retrieval, such as networking equipment, telecommunications systems, and industrial automation.

How Does CY7C1061DV33-10ZSXI Work?

The CY7C1061DV33-10ZSXI operates as a synchronous SRAM, providing fast and reliable access to stored data. It features a synchronous interface that enables synchronized data transfers with the system's clock signals, ensuring high-speed operation. The device offers non-volatile storage of data without the need for constant power, making it suitable for various applications.

How Many Pins does CY7C1061DV33-10ZSXI have and What are the Functions of the Pinout Configuration?

The CY7C1061DV33-10ZSXI is typically available in a 44-pin Thin Small Outline Package (TSOP) or a 44-pin Very Thin Small Outline Package (VSOP). The pinout configuration includes:

  • VDD, VDDQ: Power supply pins.
  • GND: Ground pin.
  • CLK, /CLK: Clock and inverted clock inputs for synchronous operation.
  • AD(0-17): Address pins for selecting memory locations.
  • DQ(0-17): Data input/output pins for bi-directional data transfer.
  • UB, LB: Byte write enable pins.
  • OE: Output enable for data output control.
  • CE, /CE: Chip enable and inverted chip enable for device selection.

What are the Pros and Cons of CY7C1061DV33-10ZSXI?

Pros:

  • High Performance: Offers fast access times and high-speed operation for data-intensive applications.
  • Non-Volatile Storage: Retains stored data without requiring continuous power, providing reliability and data integrity.
  • Synchronous Interface: Enables synchronized data transfers for efficient communication with the system.
  • Wide Operating Voltage Range: Supports a wide voltage range for versatile integration into different systems.
  • Durability: Provides robust and reliable data storage in harsh operating conditions.

Cons:

  • Cost: Synchronous SRAM devices may have higher costs compared to asynchronous alternatives.
  • Complex Timing Requirements: Requires careful consideration of timing constraints and signal integrity for proper operation.
  • Package Size: The 44-pin TSOP or VSOP package may not be suitable for space-constrained designs.

Are There Any Equivalents/Alternatives to CY7C1061DV33-10ZSXI for Recommendation?

  • The CY7C1061DV33-10ZC from Cypress Semiconductor is a similar synchronous SRAM device with comparable features.
  • Alternatives to the CY7C1061DV33-10ZSXI include the IS61WV51216BLL from Integrated Silicon Solution, Inc. and the AS7C34096-15TC from Alliance Memory, Inc.

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