CY7C1061AV33-10ZXI

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10ns 54-Pin TSOP

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CY7C1061AV33-10ZXI DataSheet

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CY7C1061AV33-10ZXI Details

The CY7C1061AV33-10ZXI is a high-speed synchronous SRAM (Static Random Access Memory) from Cypress Semiconductor, offering fast and reliable data storage capabilities. This SRAM features a capacity of 8 Megabits (1M x 8/512k x 16) with a 10ns access time, making it suitable for applications requiring high-speed data transfer.

Pinout

  • 1 (CE1#): Chip Enable 1
  • 2 (CE2#): Chip Enable 2
  • 3 (OE#): Output Enable
  • 4 (WE#): Write Enable
  • 5-26 (A0-A21): Address Inputs
  • 27-34 (DQ0-DQ7): Data Inputs/Outputs
  • 35 (BYTE#): Byte Mask
  • 36 (VCC): Power Supply
  • 37 (GND): Ground
  • 38 (ZZ#): Power Down

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Access: Offers a fast access time of 10ns for quick data retrieval.
  • 8 Megabit Capacity: Provides ample storage space for data-intensive applications.
  • Synchronous Operation: Operates synchronously with the clock signal for precise data handling.
  • Low Power Consumption: Designed for efficient power usage to prolong battery life.
  • Multiple Chip Enable Options: Supports two chip enable signals for flexible memory access.

Application

  • Embedded Systems: Ideal for embedded systems requiring fast and reliable memory storage.
  • Networking Equipment: Used in networking devices for high-speed data buffering and caching.
  • Telecommunication Systems: Suitable for telecommunication applications for data processing and handling.

Where to Use

The CY7C1061AV33-10ZXI is suitable for applications that demand high-speed data access and reliable storage capabilities. It is commonly used in embedded systems, networking equipment, and telecommunication systems to enhance data processing performance.

How to Use

Integrate the CY7C1061AV33-10ZXI into your system by connecting the necessary power supply and ground pins. Ensure proper handling of chip enable signals, read/write operations, and timing considerations for seamless data storage and retrieval. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the CY7C1061AV33-10ZXI illustrates how to incorporate the SRAM into your electronic design. It includes connections for power, ground, data lines, and control signals, ensuring proper functionality and data integrity.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IS61LV5128AL: A comparable synchronous SRAM with similar features and performance.
  • AS6C1008: An alternative low-power SRAM solution for data storage applications.

Complementary

The CY7C1061AV33-10ZXI can be complemented by the CY7C1019DV33, offering additional memory capacity and parallel operation capabilities for expanded data storage requirements.

When selecting complementary memory solutions, ensure compatibility and performance alignment with your specific application needs.

Frequently Asked Questions

Q: What is the access time of the CY7C1061AV33-10ZXI?

A: The CY7C1061AV33-10ZXI features a fast access time of 10ns for quick data retrieval operations. Refer to the datasheet for detailed timing specifications.

Q: Can the CY7C1061AV33-10ZXI be used in battery-powered applications?

A: Yes, the low power consumption design of the CY7C1061AV33-10ZXI makes it suitable for battery-powered devices requiring efficient memory solutions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 16 Mbit Organization 1 M x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 275 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Mounting Style SMD/SMT
Package / Case TSOP-54 Brand Infineon Technologies
Memory Type ! SDR Moisture Sensitive Yes
Product Type ! SRAM Series CY7C1061AV33
Factory Pack Quantity 108 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.136546 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1061AV33-10ZXI PDF Download

FAQs

What is CY7C1061AV33-10ZXI?

The CY7C1061AV33-10ZXI is a high-performance, low-power, and high-speed 1-Mbit static random access memory (SRAM) designed by Cypress Semiconductor. It is ideal for use in networking equipment, industrial automation, and high-speed data processing applications.

How Does CY7C1061AV33-10ZXI Work?

The CY7C1061AV33-10ZXI operates as a fast and reliable memory storage solution for digital systems. It stores data with high speed and low power consumption, providing quick access to stored information. The SRAM features a high-speed parallel interface for efficient data transfer with the host system.

How Many Pins does CY7C1061AV33-10ZXI have and What are the Functions of the Pinout Configuration?

The CY7C1061AV33-10ZXI is housed in a 32-pin TSOP-II package. The pinout configuration includes:

  • VDD, VSS: Power supply pins for the device.
  • DQ0-DQ15: Data input/output pins for the 2-byte-wide data bus.
  • CE1, CE2: Chip enable inputs for bank 1 and bank 2, enabling memory access.
  • OE: Output enable input for enabling data output onto the data bus.
  • WE: Write enable input for writing data into the memory array.
  • UB, LB: Byte control inputs for selecting upper or lower byte of the data bus.
  • BYTE: Byte control input for selecting the byte-wide data bus mode.

What are the Pros and Cons of CY7C1061AV33-10ZXI?

Pros:

  • High Speed: Offers fast access times for quick data retrieval and storage.
  • Low Power Consumption: Operates with low power, suitable for power-sensitive applications.
  • High Reliability: Provides reliable data storage and retrieval for critical applications.
  • Wide Temperature Range: Supports extended temperature range for operation in harsh environments.
  • Easy Integration: Utilizes a standard parallel interface for seamless integration with digital systems.

Cons:

  • Cost: High-performance SRAMs may have a higher cost compared to lower-speed alternatives.
  • Complex Interface: Requires careful consideration of timing and control signals for proper operation.
  • Package Size: The 32-pin TSOP-II package may require careful handling during assembly and soldering processes.

Are There Any Equivalents/Alternatives to CY7C1061AV33-10ZXI for Recommendation?

  • The AS6C1008 from Alliance Memory is a similar 1-Mbit SRAM suitable for many of the same applications.
  • Alternatives to the CY7C1061AV33-10ZXI include the IDT71V416S from IDT and the IS61C1024 from Integrated Silicon Solution, Inc.

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