CY7C1049DV33-10ZSXI

TSOP2-44 configuration for easy installation and use
6,335 Effective Inventory

CY7C1049DV33-10ZSXI

Effective Inventory6,335

TSOP2-44 configuration for easy installation and use

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CY7C1049DV33-10ZSXI DataSheet
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CY7C1049DV33-10ZSXI Details

The CY7C1049DV33-10ZSXI is a synchronous SRAM IC from Infineon, designed for high-speed and reliable data storage in various applications. This device features a density of 4Mbit, organized as 256K x 16 bits, operating at a voltage of 3.3V, with a fast access time of 10ns, and is offered in a 44-pin TSOP-II package.

Key Features

  • Synchronous SRAM IC: Provides high-speed and reliable data storage.
  • 4Mbit Density: Organized as 256K x 16 bits for efficient data storage.
  • 3.3V Operation: Suitable for a wide range of applications with varying power supply requirements.
  • 10ns Access Time: Enables fast and reliable data access.
  • Low Standby Current: Reduces power consumption during standby mode.

Applications

  • Communication Systems: Ideal for communication systems, networking equipment, and industrial automation applications.
  • Industrial Automation: Suitable for industrial control systems requiring high-speed data storage and processing.
  • Automotive Systems: Used in automotive systems where reliable data storage and processing are critical.

Where to Use

The CY7C1049DV33-10ZSXI is suitable for applications requiring high-speed and reliable data storage, such as communication systems, industrial automation, and automotive systems.

How to Use

To use the CY7C1049DV33-10ZSXI, refer to the datasheet for detailed usage instructions. This includes information on power supply connections, data input/output, and operating conditions.

Application Circuit

The application circuit diagram for the CY7C1049DV33-10ZSXI illustrates how to connect the SRAM IC to a system. It includes connections for power supply, ground, and data input/output lines, ensuring proper operation and reliable data storage.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Complementary

The CY7C1049DV33-10ZSXI can be complemented by other Infineon SRAM ICs with varying densities and operating conditions, suitable for different application requirements.

When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

Q: What is the maximum access time supported by the CY7C1049DV33-10ZSXI?

A: The CY7C1049DV33-10ZSXI supports an access time of 10ns. For more details, refer to the datasheet for specific operating conditions and limitations.

Q: Can the CY7C1049DV33-10ZSXI be used in automotive systems?

A: Yes, the CY7C1049DV33-10ZSXI is suitable for automotive systems where reliable data storage and processing are critical.

CY7C1049DV33-10ZSXI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 4 Mbit Organization 512 k x 8
Access Time 10 ns Maximum Clock Frequency 100 MHz
Interface Type Parallel Supply Voltage - Max 3.6 V
Supply Voltage - Min 3 V Supply Current - Max 90 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature ! + 85 C
Mounting Style SMD/SMT Package / Case TSOP-44
Brand Infineon Technologies Memory Type ! SDR
Moisture Sensitive Yes Product Type ! SRAM
Series CY7C1049DV33 Factory Pack Quantity 675
Subcategory Memory & Data Storage Type Asynchronous
Unit Weight 0.165400 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1049DV33-10ZSXI PDF Download

FAQs

What is CY7C1049DV33-10ZSXI?

The CY7C1049DV33-10ZSXI is a high-performance synchronous SRAM (Static Random Access Memory) designed by Cypress Semiconductor. It offers fast access times and high-speed operation, making it suitable for applications requiring high-speed data storage and retrieval.

How Does CY7C1049DV33-10ZSXI Work?

The CY7C1049DV33-10ZSXI operates as a synchronous SRAM device, allowing for synchronized read and write operations with the system clock. It stores data in a volatile memory array and provides quick access to stored information. The device offers high-speed operation and low latency, making it ideal for demanding applications that require fast data processing.

How Many Pins does CY7C1049DV33-10ZSXI have and What are the Functions of the Pinout Configuration?

The CY7C1049DV33-10ZSXI is housed in a 119-ball BGA (Ball Grid Array) package. The pinout configuration includes:

  • VDDQ: Power supply pin for the I/O buffers.
  • VDD: Power supply pin for the core.
  • GND: Ground pin.
  • CLK: Clock input pin for synchronization.
  • CE: Chip enable pin for device activation.
  • OE: Output enable pin for controlling data output.
  • BYTE: Byte control pin for selecting byte operations.
  • DQ: Data input/output pins.
  • ADR: Address input pins.

What are the Pros and Cons of CY7C1049DV33-10ZSXI?

Pros:

  • High Performance: Offers fast access times and high-speed operation.
  • Synchronous Operation: Synchronized read and write operations with the system clock.
  • Reliable Data Storage: Provides reliable data retention and quick access to stored information.
  • High-Speed Data Processing: Ideal for applications requiring rapid data processing.
  • Compact BGA Package: Space-efficient 119-ball BGA package for compact designs.

Cons:

  • Complex Pinout: The device may have a complex pinout configuration that requires careful design considerations.
  • Integration Challenges: Requires proper clock synchronization and interface design for optimal performance.
  • Cost: High-performance SRAMs like the CY7C1049DV33-10ZSXI may have a higher cost compared to lower-speed alternatives.

Are There Any Equivalents/Alternatives to CY7C1049DV33-10ZSXI for Recommendation?

  • Similar synchronous SRAM alternatives to the CY7C1049DV33-10ZSXI include the AS7C34096A from Alliance Memory and the IS61WV51216BLL from Integrated Silicon Solution, Inc. (ISSI).
  • For high-speed memory applications, consider alternatives like the MT45W8MW16BGX-701 WT from Micron Technology or the K6X2008C2D from Samsung Semiconductor.

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