CY7C1049DV33-10VXI

With a capacity of 4Mb, a speed of 10ns, and operating at 3.3V, the CY7C1049DV33-10VXI is a high-performance asynchronous SRAM chip
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CY7C1049DV33-10VXI

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With a capacity of 4Mb, a speed of 10ns, and operating at 3.3V, the CY7C1049DV33-10VXI is a high-performance asynchronous SRAM chip

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CY7C1049DV33-10VXI DataSheet
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CY7C1049DV33-10VXI Details

The CY7C1049DV33-10VXI is a high-performance synchronous SRAM (Static Random-Access Memory) from Cypress Semiconductor, featuring a density of 4Mbit and a fast access time of 10ns. This device is designed to provide reliable and high-speed memory access for various applications, including networking, telecommunications, and industrial systems.

Pinout

  • 1 (NC): No Connection
  • 2 (/OE): Output Enable
  • 3 (/WE): Write Enable
  • 4 (A0-A18): Address Inputs
  • 5-22 (DQ0-DQ17): Data Input/Output
  • 23 (VCC): Positive Power Supply
  • 24 (GND): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Performance: Offers a fast access time of 10ns for efficient memory operation.
  • High Density: Provides a memory density of 4Mbit, suitable for demanding applications.
  • Synchronous Operation: Supports synchronous interface for precise data transfer timing.
  • Low Power Consumption: Designed for low power operation, ideal for energy-efficient designs.
  • Industrial Grade: Built to withstand industrial temperature and environmental conditions.

Application

  • Networking Equipment: Suitable for use in routers, switches, and network infrastructure devices.
  • Telecommunications Systems: Used in telecommunications equipment and base station applications.
  • Industrial Control: Ideal for industrial automation and control systems requiring high-speed memory access.

Where to Use

The CY7C1049DV33-10VXI is well-suited for applications requiring fast and reliable memory access, especially in networking, telecommunications, and industrial control systems. It provides high performance and density for data-critical operations.

How to Use

Connect the CY7C1049DV33-10VXI to the system bus and power supply, ensuring proper signal timing and voltage levels. Use the /OE and /WE pins to control memory access and the address inputs for selecting memory locations. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the CY7C1049DV33-10VXI demonstrates the connections and interfacing with the system bus, power supply, and control signals for seamless memory operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IS61LV25616AL: A similar synchronous SRAM offering equivalent performance and density.
  • AS6C1008-55SIN: An alternative high-speed SRAM with comparable features and specifications.

Complementary

The CY7C1049DV33-10VXI can be complemented by the CY7C1019DV33-10ZSXI, which offers a lower density with similar high-speed performance, suitable for specific memory expansion needs.

When selecting complementary memory devices, ensure compatibility and synchronization with the existing memory architecture for optimal performance.

Frequently Asked Questions

Q: What is the maximum operating frequency supported by the CY7C1049DV33-10VXI?

A: The CY7C1049DV33-10VXI can support operating frequencies up to [insert frequency here] MHz. For specific timing and frequency details, please refer to the datasheet.

Q: Is the CY7C1049DV33-10VXI suitable for use in harsh industrial environments?

A: Yes, the CY7C1049DV33-10VXI is designed to withstand industrial temperature and environmental conditions, ensuring reliable operation in demanding industrial settings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 4 Mbit Organization 512 k x 8
Access Time 10 ns Maximum Clock Frequency 100 MHz
Interface Type Parallel Supply Voltage - Max 3.6 V
Supply Voltage - Min 3 V Supply Current - Max 90 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature ! + 85 C
Mounting Style SMD/SMT Package / Case SOJ-36
Brand Infineon Technologies Memory Type ! SDR
Moisture Sensitive Yes Product Type ! SRAM
Series CY7C1049DV33 Factory Pack Quantity 190
Subcategory Memory & Data Storage Type Asynchronous
Unit Weight 0.011640 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1049DV33-10VXI PDF Download

FAQs

What is CY7C1049DV33-10VXI?

The CY7C1049DV33-10VXI is a high-performance, low-power synchronous SRAM (Static Random Access Memory) designed by Cypress Semiconductor. It is ideal for applications requiring fast, reliable access to data with low power consumption, such as networking equipment, telecommunications systems, and industrial automation.

How Does CY7C1049DV33-10VXI Work?

The CY7C1049DV33-10VXI operates as a synchronous SRAM, providing fast access to stored data with synchronized clock signals. It features a burst mode for efficient data transfer and a low-power standby mode for energy savings. The memory device offers high-speed performance for demanding applications that require quick data retrieval.

How Many Pins does CY7C1049DV33-10VXI have and What are the Functions of the Pinout Configuration?

The CY7C1049DV33-10VXI is housed in a 44-pin VFBGA (Very Fine-Pitch Ball Grid Array) package. The pinout configuration includes:

  • VDDQ: Power supply for data input/output.
  • VDD: Positive power supply pin.
  • GND: Ground pin.
  • CLK, CLKEN, OE, WEN: Clock and control pins.
  • ADDR: Address input pins.
  • DQ: Data input/output pins.
  • CS: Chip select input pin.
  • LB, UB: Burst control inputs.

What are the Pros and Cons of CY7C1049DV33-10VXI?

Pros:

  • High Performance: Provides fast access times for rapid data processing.
  • Low Power Consumption: Operates with low power for energy-efficient operation.
  • Burst Mode: Supports burst mode operations for efficient data transfer.
  • Reliability: Offers reliable data storage and access for critical applications.
  • High-Speed Interface: Ensures seamless integration with high-speed systems.

Cons:

  • Complexity: Requires proper interfacing and timing considerations for optimal performance.
  • Cost: High-performance SRAMs like the CY7C1049DV33-10VXI may be more expensive compared to standard memory options.
  • Availability: May have limited availability or lead times due to specific applications and demand.

Are There Any Equivalents/Alternatives to CY7C1049DV33-10VXI for Recommendation?

  • Similar products to the CY7C1049DV33-10VXI include the IS61WV51216BLL from Integrated Silicon Solution Inc. and the AS6C1024-55SIN from Alliance Memory.
  • Alternatives to consider are the MT45W8MW16BGX-701 WT from Micron Technology and the M68AW512ML70ND6 from Renesas Electronics.

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