CY7C1049D-10VXI

4Mbit Parallel Static Random Access Memory
7,015 Effective Inventory

CY7C1049D-10VXI

Effective Inventory7,015

4Mbit Parallel Static Random Access Memory

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CY7C1049D-10VXI DataSheet
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CY7C1049D-10VXI Details

The CY7C1049D-10VXI is a high-performance, low-power consumption SRAM (Static Random Access Memory) device from Cypress Semiconductor, designed for industrial control systems and other applications requiring fast access time and high-speed memory. This 4Mbit parallel SRAM features a 10 ns access time, making it suitable for use in embedded systems, data storage devices, and other applications where low latency and high throughput are critical.

Pinout

  • A0-A17: Address Inputs (Parallel)
  • DQ0-DQ31: Data Outputs (Parallel)
  • WE: Write Enable Input
  • OE: Output Enable Input
  • UB: Upper Byte Chip Select Input
  • LB: Lower Byte Chip Select Input

Key Features

  • 4Mbit (512K x 8) SRAM capacity
  • 10 ns access time for fast data transfer
  • Low power consumption: 100 mW typical, 150 mW maximum
  • Industrial temperature range: -40°C to 85°C
  • Parallel interface for easy integration with microcontrollers and other devices

Applications

  • Data storage devices (e.g., flash drives, solid-state drives)
  • Embedded systems (e.g., industrial control systems, automotive systems)
  • Networking equipment (e.g., routers, switches)
  • Other applications requiring fast access time and high-speed memory

Where to Use

The CY7C1049D-10VXI is suitable for use in a wide range of applications, including industrial control systems, automotive systems, data storage devices, and networking equipment. It can be used in any application where fast access time and high-speed memory are critical.

How to Use

To use the CY7C1049D-10VXI, connect it to your system's microcontroller or other device using a parallel interface. Set the address inputs (A0-A17) and chip select inputs (UB and LB) according to your system's requirements. Then, write data to the SRAM using the WE input, and read data from the SRAM using the OE input.

Application Circuit

The application circuit diagram for the CY7C1049D-10VXI illustrates how to connect the SRAM to your system's microcontroller or other device. It includes connections for power supply, ground, and address inputs, as well as chip select and data transfer signals.

Equivalents

  • CY7C1029D-10VXI: A similar SRAM device from Cypress Semiconductor with a 2Mbit capacity and 15 ns access time.
  • IS42S16400J: An alternative SRAM device from ISSI with a 4Mbit capacity and 12 ns access time.

Complementary

The CY7C1049D-10VXI can be complemented by other Cypress Semiconductor devices, such as the CY7C1029D-10VXI or the CY7C1069D-10VXI, which offer different capacities and access times. When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

  • Q: What is the maximum operating temperature of the CY7C1049D-10VXI?
  • A: The CY7C1049D-10VXI operates over an industrial temperature range of -40°C to 85°C.
  • Q: Can the CY7C1049D-10VXI be used in automotive systems?
  • A: Yes, the CY7C1049D-10VXI is suitable for use in automotive systems due to its industrial temperature range and low power consumption.
CY7C1049D-10VXI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 4 Mbit Organization 512 k x 8
Access Time 10 ns Maximum Clock Frequency 100 MHz
Interface Type Parallel Supply Voltage - Max 5.5 V
Supply Voltage - Min 4.5 V Supply Current - Max 90 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature ! + 85 C
Mounting Style SMD/SMT Package / Case SOJ-36
Brand Infineon Technologies Memory Type ! SDR
Moisture Sensitive Yes Product Type ! SRAM
Series CY7C1049D Factory Pack Quantity 190
Subcategory Memory & Data Storage Type Asynchronous
Unit Weight 0.011640 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1049D-10VXI PDF Download

FAQs

What is CY7C1049D-10VXI?

The CY7C1049D-10VXI is a high-performance 5V 1-Mbit (128K x 8) static RAM (SRAM) designed by Cypress Semiconductor. It is ideal for applications requiring fast, non-volatile memory, such as industrial automation, networking, and telecommunications equipment.

How Does CY7C1049D-10VXI Work?

The CY7C1049D-10VXI operates as a non-volatile memory storage device that retains stored data without the need for refreshing. It offers fast access times and low power consumption, making it suitable for high-performance, battery-powered applications. The SRAM can be interfaced with a microcontroller or processor for storing and retrieving data.

How Many Pins does CY7C1049D-10VXI have and What are the Functions of the Pinout Configuration?

The CY7C1049D-10VXI is housed in a 32-pin Very Thin Small Outline Package (VT SOP). The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • Address Inputs (A0-A16): Inputs for addressing memory locations.
  • Data Inputs/Outputs (DQ0-DQ7): Bidirectional data pins.
  • Chip Enable (CE1, CE2): Chip enable pins for selecting device operation.
  • Output Enable (OE): Output enable pin for enabling data output.
  • Write Enable (WE): Write enable pin for writing data to the memory.
  • Byte Enable (BYTE): Byte enable pin for selecting byte or word operations.
  • Output Pins (Q/Q, Q/Q): Power-up/power-down output state pins.

What are the Pros and Cons of CY7C1049D-10VXI?

Pros:

  • High Performance: Offers fast access times and operates at 5V, suitable for high-speed applications.
  • Non-Volatile: Retains data without the need for refreshing, providing reliable memory storage.
  • Low Power Consumption: Consumes low power, making it suitable for battery-powered devices.
  • Large Capacity: Provides 1 Megabit (128K x 8) of storage capacity for data-intensive applications.
  • Industrial Temperature Range: Operates reliably over an extended industrial temperature range.

Cons:

  • Package Size: The VT SOP package may be relatively larger compared to other compact packages.
  • Compatibility: Requires a 5V power supply, which may not be suitable for all low-power applications.
  • Complex Interface: May require careful handling of address and control signals for proper operation.

Are There Any Equivalents/Alternatives to CY7C1049D-10VXI for Recommendation?

  • The CY7C1049BV33-10ZI from Cypress Semiconductor is a similar 1-Mbit SRAM with a lower voltage operation.
  • Alternatives to the CY7C1049D-10VXI include the AS6C1008-55SIN from Alliance Memory and the 628128LP from ISSI (Integrated Silicon Solution, Inc.).

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