CY7C1041DV33-10BVXI

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CY7C1041DV33-10BVXI

Effective Inventory4,774

Quad flat no-lead package

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CY7C1041DV33-10BVXI DataSheet
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CY7C1041DV33-10BVXI Details

The CY7C1041DV33-10BVXI is a high-speed asynchronous SRAM (Static Random Access Memory) chip from Cypress Semiconductor, offering fast and reliable data storage capabilities. This memory IC operates at a voltage of 3.3V and has a capacity of 1 Megabit, making it suitable for various embedded and computing applications.

Pinout

  • 1 (A0): Address Input
  • 2 (A1): Address Input
  • 3 (A2): Address Input
  • 4 (A3): Address Input
  • 5 (A4): Address Input
  • 6 (A5): Address Input
  • 7 (A6): Address Input
  • 8 (VCC): Positive Power Supply
  • 9 (WE): Write Enable
  • 10 (OE): Output Enable
  • 11 (CE): Chip Enable
  • 12 (I/O0): Data Input/Output
  • 13 (I/O1): Data Input/Output
  • 14 (I/O2): Data Input/Output
  • 15 (I/O3): Data Input/Output
  • 16 (GND): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Operation: Offers fast access times for efficient data retrieval.
  • Low Power Consumption: Designed for energy-efficient operation in various devices.
  • 1MBit Capacity: Provides ample storage capacity for data-intensive applications.
  • 3.3V Voltage Operation: Operates at a standard voltage level for compatibility.
  • Reliable Performance: Ensures data integrity and stability during operations.

Application

  • Embedded Systems: Suitable for use in embedded systems requiring fast and reliable memory storage.
  • Networking Devices: Used in networking devices for buffering and caching purposes.
  • Industrial Control: Commonly applied in industrial control systems for data processing and storage.

Where to Use

The CY7C1041DV33-10BVXI is ideal for applications that demand high-speed and low-power memory solutions. It can be integrated into embedded systems, networking equipment, and industrial control systems to enhance data processing and storage capabilities.

How to Use

Integrate the CY7C1041DV33-10BVXI into your circuit design by connecting the address lines, control signals (WE, OE, CE), and data I/O lines appropriately. Provide a stable power supply voltage (VCC) and ensure proper grounding (GND) for reliable operation. Refer to the datasheet for detailed timing diagrams and operational guidelines.

Application Circuit

The application circuit diagram for the CY7C1041DV33-10BVXI illustrates how to connect the SRAM chip in a typical memory system setup. It showcases the connections for address lines, control signals, data I/O, power supply, and ground, ensuring correct functionality and data access.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • AS6C1008-55SIN: A comparable asynchronous SRAM chip with similar features and specifications.
  • IS61C1024-15JI: An alternative SRAM option offering equivalent performance characteristics.

Complementary

The CY7C1041DV33-10BVXI can be paired with the CY7C1041DV33-15BVXI for expanded memory capacity and parallel data processing capabilities. This combination enhances overall system performance in data-intensive applications.

Ensure compatibility and system requirements match when selecting complementary memory components.

Frequently Asked Questions

Q: What is the access time of the CY7C1041DV33-10BVXI?

A: The CY7C1041DV33-10BVXI offers fast access times suitable for high-speed data retrieval tasks. Refer to the datasheet for specific timing details.

Q: Can the CY7C1041DV33-10BVXI be cascaded for increased memory capacity?

A: Yes, multiple CY7C1041DV33-10BVXI chips can be cascaded to expand memory capacity in systems requiring additional storage resources.

CY7C1041DV33-10BVXI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 4 Mbit Organization 256 k x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 90 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Mounting Style SMD/SMT
Package / Case VFBGA-48 Brand Infineon Technologies
Memory Type ! SDR Moisture Sensitive Yes
Product Type ! SRAM Series CY7C1041DV33
Factory Pack Quantity 480 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.007873 oz

Specification Comparison

CY7C1049B-15VI vs CY7C1041CV33-10ZSXA vs CY7C1041DV33-10BVXI

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1041DV33-10BVXI PDF Download

FAQs

What is CY7C1041DV33-10BVXI?

The CY7C1041DV33-10BVXI is a low-power, high-performance 4Mbit (512K x 8) static random access memory (SRAM) designed by Cypress Semiconductor. It is ideal for applications requiring fast access times, low power consumption, and high reliability, such as battery-powered devices, networking equipment, and embedded systems.

How Does CY7C1041DV33-10BVXI Work?

The CY7C1041DV33-10BVXI operates as a high-speed SRAM with a non-volatile ferroelectric random access memory (F-RAM) cell design. It offers fast access times and low active and standby power, making it suitable for power-sensitive applications. The SRAM features a simple interface for easy integration into various system designs.

How Many Pins does CY7C1041DV33-10BVXI have and What are the Functions of the Pinout Configuration?

The CY7C1041DV33-10BVXI is housed in a 32-pin SOJ (Small Outline J-lead) package. The pinout configuration includes:

  • VDD, VSS: Power supply and ground pins, respectively.
  • NC: No connect pins.
  • WE, OE: Write enable and output enable control pins.
  • UB, LB: Upper byte and lower byte data input/output pins.
  • Address Pins (A0-A18): Address input pins for memory addressing.
  • CE1, CE2: Chip enable control pins for device selection.

What are the Pros and Cons of CY7C1041DV33-10BVXI?

Pros:

  • High Performance: Offers fast access times for quick data retrieval.
  • Low Power Consumption: Operates with low active and standby power, suitable for battery-powered devices.
  • Non-Volatile Memory: Utilizes F-RAM cell design for high reliability and non-volatile data retention.
  • Simple Interface: Features a straightforward interface for easy integration into system designs.
  • High Density: Provides 4Mbit of memory in a compact package, suitable for space-constrained designs.

Cons:

  • Higher Cost: May have a higher cost compared to traditional SRAM technologies due to F-RAM design.
  • Package Size: The 32-pin SOJ package may require more space compared to smaller form factors.

Are There Any Equivalents/Alternatives to CY7C1041DV33-10BVXI for Recommendation?

  • The FM18W08 from Ramtron (now Cypress Semiconductor) is an alternative F-RAM-based SRAM with comparable features.
  • Equivalents to the CY7C1041DV33-10BVXI include the MB8464A from Fujitsu and the AS6C4008 from Alliance Memory.

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