CY7C1019DV33-10ZSXI

128Kx8 Fast Async SRAM
4,335 Effective Inventory

CY7C1019DV33-10ZSXI

Effective Inventory4,335

128Kx8 Fast Async SRAM

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CY7C1019DV33-10ZSXI DataSheet
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CY7C1019DV33-10ZSXI Details

The CY7C1019DV33-10ZSXI is a high-speed CMOS SRAM memory device from Cypress Semiconductor. It offers a capacity of 1MB (128K x 8) and operates at a speed of 10ns for fast and efficient data access. This device is designed for use in various applications, including embedded systems, networking equipment, and telecommunications devices.

Pinout

  • 1 (WE): Write Enable
  • 2 (OE): Output Enable
  • 3-10 (A0-A7): Address Inputs
  • 11-18 (DQ0-DQ7): Data Inputs/Outputs
  • 19 (VCC): Positive Power Supply
  • 20 (GND): Ground

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Capacity: Provides 1MB of storage space for storing data.
  • High Speed: Operates at a speed of 10ns for fast data access.
  • Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
  • Wide Operating Voltage Range: Supports a wide voltage range from 2.7V to 3.6V for flexible use in different systems.
  • Industry-Standard Interface: Uses a common 8-bit parallel interface for easy integration with other components.

Application

  • Embedded Systems: Suitable for use in embedded systems for data storage and retrieval.
  • Networking Equipment: Used in networking devices such as routers and switches for high-speed data processing.
  • Telecommunications Devices: Ideal for telecommunications equipment requiring fast and reliable memory access.

Where to Use

The CY7C1019DV33-10ZSXI is suitable for applications that require high-speed and high-capacity memory, such as embedded systems, networking equipment, and telecommunications devices. It provides efficient data storage and retrieval, enhancing overall system performance.

How to Use

Connect the CY7C1019DV33-10ZSXI to your system by wiring the address inputs (A0-A7), data inputs/outputs (DQ0-DQ7), and control signals (WE, OE) to the corresponding pins on the device. Ensure proper power supply connections to VCC and ground (GND). Follow the timing and control requirements specified in the datasheet for reliable operation. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the CY7C1019DV33-10ZSXI illustrates the connections required to integrate the memory device into your system. It includes connections for address inputs, data inputs/outputs, power supply, and control signals, ensuring proper operation and data access.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IS61C1024: A similar CMOS SRAM memory device offering comparable capacity and performance.
  • AS6C1008: An alternative CMOS SRAM memory device with equivalent functionality and features.

Complementary

The CY7C1019DV33-10ZSXI can be complemented by the CY7C1021DV33-15ZSXIT, which offers a higher capacity and slightly slower access time. This combination allows for flexible memory expansion and performance optimization in various applications.

When selecting complementary memory devices, ensure their specifications and compatibility align with your specific system requirements.

Frequently Asked Questions

Q: What is the operating voltage range of the CY7C1019DV33-10ZSXI?

A: The CY7C1019DV33-10ZSXI operates from 2.7V to 3.6V. Ensure that the power supply voltage falls within this range for proper operation and reliable data access.

Q: What is the maximum speed at which data can be accessed from the CY7C1019DV33-10ZSXI?

A: The CY7C1019DV33-10ZSXI offers a speed of 10ns for data access. This allows for fast and efficient retrieval of stored information.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 1 Mbit Organization 128 k x 8
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 60 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Mounting Style SMD/SMT
Package / Case TSOP-32 Brand Infineon Technologies
Memory Type ! Volatile Moisture Sensitive Yes
Number of Ports ! 1 Product Type ! SRAM
Series CY7C1019DV33 Factory Pack Quantity 468
Subcategory Memory & Data Storage Type Asynchronous
Unit Weight 0.077179 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY7C1019DV33-10ZSXI PDF Download

FAQs

What is CY7C1019DV33-10ZSXI?

The CY7C1019DV33-10ZSXI is a high-performance asynchronous, low-power, 128K x 16-bit CMOS static random access memory (SRAM) designed by Cypress Semiconductor. It is suitable for a wide range of applications requiring fast access times, low power consumption, and high reliability, such as networking equipment, telecommunications systems, and industrial automation.

How Does CY7C1019DV33-10ZSXI Work?

The CY7C1019DV33-10ZSXI operates as a fast, non-volatile memory device that stores data reliably without the need for a refresh cycle. It provides high-speed access to stored information and retains data even when the power is turned off. The SRAM uses a simple data input and output interface, making it easy to integrate into various digital systems and applications.

How Many Pins does CY7C1019DV33-10ZSXI have and What are the Functions of the Pinout Configuration?

The CY7C1019DV33-10ZSXI is housed in a 44-pin TSOP-II (Thin Small Outline Package) package. The pinout configuration includes:

  • VDDQ, VSSQ: Power and ground pins for I/O buffer.
  • A0-A16: Address input pins for selecting memory location.
  • CE1, CE2: Chip enable pins for controlling memory access.
  • OE: Output enable pin for enabling data output.
  • WE: Write enable pin for writing data to memory.
  • BYTE: Byte write enable pin for selecting byte or word write mode.
  • UB, LB: Upper byte and lower byte data inputs and outputs.
  • NC: No-connect pins.

What are the Pros and Cons of CY7C1019DV33-10ZSXI?

Pros:

  • High Performance: Offers fast access times for quick data retrieval.
  • Low Power Consumption: Operates with low power, ideal for energy-efficient systems.
  • High Reliability: Provides non-volatile data storage without the need for refresh cycles.
  • Industry-Standard Package: Housed in a commonly used 44-pin TSOP-II package for easy integration.
  • Wide Application Range: Suitable for diverse applications including networking, telecommunications, and industrial automation.

Cons:

  • Complex Interface: May require careful handling of control signals for proper memory operation.
  • Package Size: The 44-pin TSOP-II package may be relatively larger compared to other memory devices.
  • Cost: Higher performance and reliability may lead to a higher cost compared to lower-grade memory solutions.

Are There Any Equivalents/Alternatives to CY7C1019DV33-10ZSXI for Recommendation?

  • The AS6C1008 from Alliance Memory is a similar 128K x 8 SRAM offering.
  • Alternatives to the CY7C1019DV33-10ZSXI include the IS61LV25616AL from Integrated Silicon Solution Inc. and the WED2V81618 from Winbond Electronics.

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