CY62256NLL-55SNXIT

Small form factor, low energy consumption
7,077 Effective Inventory

CY62256NLL-55SNXIT

Effective Inventory7,077

Small form factor, low energy consumption

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CY62256NLL-55SNXIT DataSheet
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CY62256NLL-55SNXIT Details

The CY62256NLL-55SNXIT is a high-speed, low-power static RAM (SRAM) from Cypress Semiconductor, offering reliable memory storage for various electronic applications. This SRAM module features a capacity of 256K (32K x 8) bits with a fast access time of 55ns, making it suitable for high-performance systems requiring quick data retrieval.

Pinout

  • 1 (A0): Address Input
  • 2 (A1): Address Input
  • 3 (A2): Address Input
  • 4 (A3): Address Input
  • 5 (A4): Address Input
  • 6 (A5): Address Input
  • 7 (A6): Address Input
  • 8 (A7): Address Input
  • 9 (A8): Address Input
  • 10 (A9): Address Input
  • 11 (A10): Address Input
  • 12 (A11): Address Input
  • 13 (A12): Address Input
  • 14 (A13): Address Input
  • 15 (A14): Address Input
  • 16 (A15): Address Input
  • 17 (CE1): Chip Enable 1
  • 18 (CE2): Chip Enable 2
  • 19 (OE): Output Enable
  • 20 (WE): Write Enable
  • 21-28 (DQ0-DQ7): Data Input/Output
  • 29-32 (VCC, VSS): Power Supply

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Access: Offers a fast access time of 55ns for quick data retrieval.
  • Low Power Consumption: Designed for low power operation, ideal for energy-efficient applications.
  • 256K-Bit Capacity: Provides ample storage capacity for data-intensive systems.
  • 8-Bit Data Bus: Features an 8-bit data bus for efficient data transfer.
  • Wide Operating Voltage: Operates within a wide voltage range for versatile compatibility.

Application

  • Embedded Systems: Suitable for embedded systems requiring fast and reliable memory access.
  • Communications Equipment: Used in communications equipment for data buffering and temporary storage.
  • Consumer Electronics: Ideal for consumer electronics that demand high-speed memory solutions.

How to Use

Connect the CY62256NLL-55SNXIT to your system by properly wiring the address, data, and control pins according to the application requirements. Ensure correct power supply connections and follow timing parameters for reliable operation. Refer to the datasheet for detailed setup instructions.

Application Circuit

The application circuit diagram for the CY62256NLL-55SNXIT illustrates the connection of the SRAM module within a typical system setup. It includes address, data, and control signal connections to ensure proper functionality and data storage.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • IS61C256AH: A similar SRAM module with comparable features and performance.
  • AS6C62256: An alternative SRAM option offering equivalent specifications.

Complementary

The CY62256NLL-55SNXIT can be complemented by the CY62146EV30LL-45BVXI, providing additional memory capacity and shared compatibility features for enhanced data storage capabilities.

When selecting complementary memory modules, ensure compatibility and alignment with your system requirements for seamless integration.

Frequently Asked Questions

Q: What is the data retention capability of the CY62256NLL-55SNXIT?

A: The CY62256NLL-55SNXIT has a data retention capability of up to 10 years. Refer to the datasheet for detailed storage specifications and recommendations.

Q: Can the CY62256NLL-55SNXIT operate at higher frequencies?

A: The CY62256NLL-55SNXIT is optimized for operation at 55ns access time. Operating at higher frequencies may require suitable system considerations and timing adjustments for proper functionality.

CY62256NLL-55SNXIT

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! SRAM RoHS Details
Memory Size ! 256 kbit Organization 32 k x 8
Access Time 55 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Supply Current - Max 50 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Mounting Style SMD/SMT
Package / Case SOIC-28 Brand Infineon Technologies
Memory Type ! SDR Moisture Sensitive Yes
Number of Ports ! 1 Product Type ! SRAM
Series CY62256NLL Factory Pack Quantity 1000
Subcategory Memory & Data Storage Tradename MoBL
Type Asynchronous Unit Weight 0.078125 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CY62256NLL-55SNXIT PDF Download

FAQs

What is CY62256NLL-55SNXIT?

The CY62256NLL-55SNXIT is a low-power, high-performance CMOS static RAM (SRAM) manufactured by Cypress Semiconductor. It is designed for use in applications requiring fast, non-volatile storage, such as embedded systems, networking equipment, and industrial automation.

How Does CY62256NLL-55SNXIT Work?

The CY62256NLL-55SNXIT operates as a static RAM, providing fast access and reliable storage of data. It utilizes CMOS technology for low power consumption and features a non-volatile design, allowing data retention even when power is removed. The SRAM supports a wide range of applications that require fast read and write access to stored data.

How Many Pins does CY62256NLL-55SNXIT have and What are the Functions of the Pinout Configuration?

The CY62256NLL-55SNXIT is housed in a 28-pin SOIC (Small Outline Integrated Circuit) package. The pinout configuration includes:

  • Chip Enable (CE1, CE2): Chip enable inputs for two independent chip selects.
  • Output Enable (OE): Output enable input for enabling data output.
  • Write Enable (WE): Write enable input for write operations.
  • Address Inputs (A0-A13): Address inputs for selecting the memory location for read or write operations.
  • Data Inputs/Outputs (I/O0-I/O7): Data input/output pins for exchanging data with the SRAM.
  • Power (Vcc, GND): Power supply and ground pins.

What are the Pros and Cons of CY62256NLL-55SNXIT?

Pros:

  • Low Power Consumption: Operates with low power, making it suitable for battery-powered devices.
  • Fast Access Time: Provides fast read and write access for high-performance applications.
  • Non-Volatile Storage: Retains data even when power is removed, ensuring data integrity.
  • Wide Operating Voltage Range: Supports a broad range of operating voltages for flexible integration.
  • Easy Integration: Can be easily interfaced with various microcontrollers and digital systems.

Cons:

  • Cost: SRAMs with non-volatile features may have a higher cost compared to standard SRAMs.
  • Limited Density: May have limitations in terms of memory capacity compared to other types of memory.
  • Package Size: The 28-pin SOIC package may be relatively large for space-constrained designs.

Are There Any Equivalents/Alternatives to CY62256NLL-55SNXIT for Recommendation?

  • The AS6C4008 from Alliance Memory is a comparable static RAM with similar features.
  • Alternatives to the CY62256NLL-55SNXIT include the IS61LV25616AL from Integrated Silicon Solution, Inc. and the FM16W08 from Ramtron, now part of Cypress Semiconductor.

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