CSD18563Q5AT

MOSFET 60V NCh NexFET Power MOSFET
3,821 Effective Inventory

CSD18563Q5AT

Effective Inventory3,821

MOSFET 60V NCh NexFET Power MOSFET

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CSD18563Q5AT DataSheet
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CSD18563Q5AT Details

The CSD18563Q5AT is a NexFET™ power MOSFET from Texas Instruments, designed for high-efficiency power management applications. This MOSFET features a low RDS(on) to minimize conduction losses and improve overall efficiency. It is housed in a compact and thermally efficient package, making it suitable for space-constrained designs requiring high power handling capabilities.

Pinout

  • 1 (GATE): Gate Terminal
  • 2 (DRAIN): Drain Terminal
  • 3 (SOURCE): Source Terminal
  • 4 (NC): No Connection
  • 5 (NC): No Connection

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low RDS(on): Minimizes conduction losses for improved efficiency.
  • High Power Handling: Capable of handling high power levels for robust performance.
  • Compact Package: Housed in a space-efficient package for versatile design integration.
  • Thermally Efficient: Designed for enhanced thermal dissipation to maintain low operating temperatures.
  • High Efficiency: Enables efficient power management in various applications.

Application

  • Power Supplies: Ideal for power supply designs requiring high efficiency and power handling capabilities.
  • Motor Control: Used in motor control applications for efficient power regulation.
  • DC-DC Converters: Suitable for DC-DC converter circuits for voltage regulation.

Where to Use

The CSD18563Q5AT is recommended for applications demanding high-efficiency power management solutions. It is commonly utilized in power supplies, motor control systems, and DC-DC converters to achieve optimal performance and energy efficiency.

How to Use

Integrate the CSD18563Q5AT into your power circuit by connecting the GATE, DRAIN, and SOURCE terminals appropriately. Ensure proper heat sinking for thermal management and adhere to voltage and current rating guidelines. For detailed operational instructions, consult the datasheet.

Application Circuit

The application circuit diagram for the CSD18563Q5AT illustrates the connections required for proper integration into a power management system. It includes the GATE, DRAIN, and SOURCE connections, as well as any necessary control circuitry for efficient operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • CSD18532Q5B: A similar NexFET™ power MOSFET offering comparable performance characteristics.
  • CSD17579Q5A: An alternative power MOSFET with equivalent power handling capabilities.

Complementary

The CSD18563Q5AT can be paired with the LM5113 gate driver for efficient and reliable power management control. The combination of the MOSFET and gate driver ensures optimal performance in high-power applications.

When selecting complementary components, verify compatibility and performance specifications to achieve desired system operation.

Frequently Asked Questions

Q: What is the maximum power handling capability of the CSD18563Q5AT?

A: The CSD18563Q5AT can handle power levels up to a certain wattage. Refer to the datasheet for precise power rating information under specific conditions.

Q: Is the CSD18563Q5AT suitable for high-frequency switching applications?

A: Yes, the CSD18563Q5AT is designed to support high-frequency switching operations. Ensure proper layout and thermal management for optimal performance in such applications.

CSD18563Q5AT

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VDS (V) 60 Configuration Single
Rds(on) at VGS=4.5 V (max) (mΩ) 10.8 Rds(on) at VGS=10 V (max) (mΩ) 6.8
IDM - pulsed drain current (max) (A) 251 QG (typ) (nC) 15
QGD (typ) (nC) 2.9 QGS (typ) (nC) 3.3
VGS (V) 20 VGSTH typ (typ) (V) 2
ID - silicon limited at TC=25°C (A) 93 ID - package limited (A) 100
Logic level Yes Operating temperature range (°C) -55 to 150
Rating Catalog

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification CSD18563Q5AT PDF Download

FAQs

What is CSD18563Q5AT?

The CSD18563Q5AT is a NexFET™ power MOSFET designed by Texas Instruments. It is a high-performance, low on-resistance, and high-efficiency MOSFET suitable for power management applications in various electronic devices such as power supplies, motor control, and load switches.

How Does CSD18563Q5AT Work?

The CSD18563Q5AT works by controlling and switching the flow of power in electronic circuits. As a power MOSFET, it can efficiently handle high currents with minimal voltage drop and power dissipation. This enables it to effectively regulate or transfer power within electronic systems, contributing to improved energy efficiency and performance.

How Many Pins does CSD18563Q5AT have and What are the Functions of the Pinout Configuration?

The CSD18563Q5AT is housed in a 5mm x 6mm SON (Small Outline No-Lead) package. The pinout configuration includes:

  • GATE: Gate control pin for turning the MOSFET on and off.
  • DRV: Driver connection for enhanced gate control.
  • SOURCE: Source pin for the MOSFET.
  • DRAIN: Drain pin for the MOSFET.
  • GND: Ground connection.

What are the Pros and Cons of CSD18563Q5AT?

Pros:

  • High Efficiency: Offers low on-resistance and high current handling capabilities, contributing to high efficiency in power management applications.
  • Compact Size: The SON package provides a compact footprint for space-constrained designs.
  • Enhanced Gate Control: The DRV pin allows for improved gate driving, enabling fast and efficient switching.
  • Reliability: Designed to withstand high power dissipation and thermal stress, ensuring long-term reliability.

Cons:

  • Complex Drive Requirements: May require a more sophisticated gate driving circuit for optimal performance in certain applications.
  • Thermal Management: Adequate heat sinking and thermal management may be necessary, especially in high-power applications.
  • Cost: High-performance power MOSFETs like the CSD18563Q5AT may come at a higher cost compared to standard MOSFETs.

Are There Any Equivalents/Alternatives to CSD18563Q5AT for Recommendation?

  • The CSD18534Q5A from Texas Instruments is a comparable power MOSFET with similar performance characteristics.
  • Alternatives to the CSD18563Q5AT include the SiHP065N60E from Vishay and the BSC028N06NS3G from Infineon Technologies.

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