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CM200YE4-12F
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-12
CM200YE4-12F
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-12
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Manufacturer Part # : CM200YE4-12F
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Package/Case: Module
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Brand: Mitsubishi Electric
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Product Categories : Single IGBTs
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Service & Packaging
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CM200YE4-12F DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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CM200YE4-12F Description
The CM200YE4-12F is a high-performance insulated gate bipolar transistor (IGBT) from Powerex Power Semiconductors, designed for robust and efficient power conversion in various industrial applications. This device features a 200A I(C) current rating, 600V V(BR)CES voltage blocking capability, and N-channel architecture, making it suitable for demanding power electronic systems.
Pin Details
The CM200YE4-12F is a discrete semiconductor component with 12 pins, offering flexible connectivity options for various circuit configurations. The pinout includes:
- P1: Gate
- P2-P11: Collector-Emitter
- P12: Emitter
Features
- High Current Rating: Handles up to 200A of current, making it suitable for demanding power conversion applications.
- High Voltage Blocking: Withstands voltages up to 600V V(BR)CES, ensuring reliable operation in high-voltage systems.
- N-Channel Architecture: Offers improved switching performance and reduced losses compared to P-channel devices.
Applications
The CM200YE4-12F is commonly used in industrial power electronic applications, including motor drives, power supplies, and renewable energy systems.
Where to Use:
- Industrial motor drives
- Power supplies for industrial equipment
- Renewable energy systems (solar, wind, etc.)
Manufacturer
The CM200YE4-12F is manufactured by Powerex Power Semiconductors, a leading provider of high-performance power semiconductor solutions.
Packages
The CM200YE4-12F comes in a 12-pin DIP (Dual In-Line Package) for easy integration into printed circuit boards.
Equivalent Parts of CM200YE4-12F
- FN400R12L: A comparable IGBT from Fuji Electric with similar specifications and performance.
- STP16NF06L: An alternative IGBT from STMicroelectronics that offers equivalent functionality.
FAQ
Q: What is the maximum current rating of the CM200YE4-12F?
A: It can handle up to 200A of current, making it suitable for demanding power conversion applications.
Q: Can the CM200YE4-12F be used in high-voltage systems?
A: Yes, it withstands voltages up to 600V V(BR)CES, ensuring reliable operation in high-voltage systems.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Part Package Code | MODULE | Pin Count ! | 12 |
| ECCN Code | EAR99 | Case Connection | ISOLATED |
| Collector Current-Max (IC) | 200 A | Collector-Emitter Voltage-Max | 600 V |
| Configuration | COMPLEX | JESD-30 Code | R-XUFM-X12 |
| Number of Elements | 4 | Number of Terminals | 12 |
| Operating Temperature-Max | 150 °C | Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Form ! | UNSPECIFIED | Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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