Congratulations On Your Successful Submission
Submission Failure
CGHV96130F
120V High Voltage Transistor
CGHV96130F
120V High Voltage Transistor
-
Manufacturer Part # : CGHV96130F
-
Package/Case: Case 440217
-
Part Status : Active
-
Brand: Macom
-
Product Categories : RF FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
WireTransfer
Paypal
CreditCard
WesternUnion
MoneyGram
Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
Tape and Reel
Cut Tape
Tube or Tray
CGHV96130F DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
CGHV96130F Details
The CGHV96130F is a high-power GaN HEMT transistor from Wolfspeed, designed for efficient and reliable RF power amplification in various applications. This transistor offers high power density and efficiency, making it ideal for use in RF power amplifiers and other high-frequency circuits.
Pinout
- 1 (GATE): Gate Terminal
- 2 (DRAIN): Drain Terminal
- 3 (SOURCE): Source Terminal
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High Power Density: Provides high power output in a compact design.
- High Efficiency: Offers efficient RF power amplification for reduced power consumption.
- Wide Frequency Range: Operates effectively across a wide frequency spectrum.
- Reliable Performance: Ensures reliable and stable operation in RF amplification circuits.
- Temperature Stability: Maintains performance consistency over varying temperature conditions.
Application
- RF Power Amplification: Ideal for RF power amplifiers in communication systems.
- Radar Systems: Used in radar systems for high-power RF signal generation.
- Wireless Infrastructure: Suitable for wireless infrastructure equipment requiring high-power RF amplification.
Where to Use
The CGHV96130F is suitable for applications requiring high-power RF amplification, such as communication systems, radar systems, and wireless infrastructure. It offers high efficiency and reliable performance for demanding RF circuit applications.
How to Use
Integrate the CGHV96130F into your RF circuit by connecting the Gate, Drain, and Source terminals appropriately. Ensure proper matching and biasing for optimal performance. Refer to the datasheet for detailed usage guidelines and specifications.
Application Circuit
The application circuit diagram for the CGHV96130F illustrates how to incorporate the transistor into an RF power amplifier circuit. Proper layout and matching techniques are essential for maximizing performance and efficiency.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- CGH40010F: A comparable high-power GaN HEMT transistor with similar performance characteristics.
- CGH35015F: An alternative GaN HEMT transistor offering high-power RF amplification capabilities.
Complementary
The CGHV96130F can be complemented by the CGHV96130P, which provides additional features such as higher power handling capability and extended frequency range. Choosing complementary components that match performance requirements is crucial for overall system performance.
Frequently Asked Questions
Q: What is the frequency range supported by the CGHV96130F?
A: The CGHV96130F operates effectively across a wide frequency range. Refer to the datasheet for specific frequency band coverage and performance specifications.
Q: Can the CGHV96130F be used in amateur radio applications?
A: Yes, the CGHV96130F is suitable for various RF applications, including amateur radio, due to its high power density and efficiency characteristics.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Wolfspeed | Product Category ! | RF JFET Transistors |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | Transistor Type | HEMT |
| Brand | Wolfspeed | Product Type ! | RF JFET Transistors |
| Factory Pack Quantity | 1 | Subcategory | Transistors |
FAQs
What is CGHV96130F?
The CGHV96130F is a high-power, broadband, gallium nitride (GaN) high-electron-mobility transistor (HEMT) designed by Wolfspeed, a Cree Company. It is specifically developed for high-frequency RF and microwave applications where high power, high efficiency, and high linearity are required.
How Does CGHV96130F Work?
The CGHV96130F operates as a power amplifier in RF and microwave circuits, providing high power output with excellent efficiency and linearity. Its GaN technology enables high-frequency operation and superior performance compared to traditional silicon-based transistors. The transistor amplifies RF signals while maintaining high power efficiency and minimal distortion.
How Many Pins does CGHV96130F have and What are the Functions of the Pinout Configuration?
The CGHV96130F is housed in a ceramic/metal flange package with a bolt-down flange. The pinout configuration includes:
- Gate (G): Input control pin for the transistor.
- Drain (D): Power output pin from the transistor.
- Source (S): Ground connection pin for the transistor.
What are the Pros and Cons of CGHV96130F?
Pros:
- High Power Output: Capable of delivering high output power in RF and microwave applications.
- High Efficiency: GaN technology offers higher efficiency compared to traditional RF transistors.
- Excellent Linearity: Provides high linearity performance for quality signal amplification.
- Broadband Operation: Suitable for a wide range of frequency bands in RF systems.
Cons:
- Cost: GaN transistors like the CGHV96130F may have a higher cost compared to silicon-based alternatives.
- Complex Matching: May require precise impedance matching for optimal performance in RF circuits.
- Heat Dissipation: High-power operation may necessitate effective heat management in the system design.
Are There Any Equivalents/Alternatives to CGHV96130F for Recommendation?
- Similar high-power GaN transistors include the CGH40006F and CGH60006F also from Wolfspeed.
- Alternatives to the CGHV96130F include the MRF13750H from NXP Semiconductors and the ATF-35143 from Broadcom.
Recommend Parts
-
![CGHV1J006D-GP4]()
5,645 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CGH40025F]()
7,012 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CGHV60040D-GP4]()
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
Brand: Wolfspeed Package/Case: Die
7,601 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H80120D-GP4]()
RF JFET Transistors GaN HEMT Bare Die 28V DC-8.0GHz 120W
Brand: MACOM Technology Solutions Package/Case: Die
2,728 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H80060D-GP4]()
Trans RF MOSFET 120V 6A Bare Die Gel
Brand: MACOM Technology Solutions Package/Case: Die
4,804 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H80045D-GP4]()
Trans RF MOSFET 120V 4.5A Bare Die Gel
Brand: MACOM Technology Solutions Package/Case: Die
4,964 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H80030D-GP4]()
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
Brand: MACOM Technology Solutions Package/Case: Die
6,633 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H80015D-GP4]()
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 Watt
Brand: MACOM Technology Solutions Package/Case: Die
4,134 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40120P]()
RF JFET Transistors 120W, GaN HEMT, 28V, DC-4.0GHz, Pill, Gen2
Brand: MACOM Technology Solutions Package/Case: 440206
3,115 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40120F]()
Ideal for RF applications requiring high power and efficiency
Brand: MACOM Technology Solutions Package/Case: Case 440223-3
2,197 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40045P]()
RF JFET Transistors 45W, GaN HEMT, 28V, DC-4.0GHz, Pill, Gen2
Brand: MACOM Technology Solutions Package/Case: 440206
2,729 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40045F]()
High-power, high-reliability RF MOSFET for demanding applications
Brand: MACOM Technology Solutions Package/Case: CASE 440223
2,790 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40035F]()
RF JFET Transistors 35W GaN HEMT 24V 4GHz Flange
Brand: MACOM Technology Solutions Package/Case: Case 440166-3
7,750 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40025F]()
High-frequency GaN HEMT transistors offering high power density and reliabilit
Brand: MACOM Technology Solutions Package/Case: CASE 440166
6,900 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40010P]()
RF JFET Transistors 10W, GaN HEMT, 28V, DC-4.0GHz, Pill, Gen2
Brand: MACOM Technology Solutions Package/Case: 440196
4,796 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
-
![CG2H40010F]()
Powerful mosfet component suitable for high-speed data transmission applications
Brand: MACOM Technology Solutions Package/Case: CASE 440166
6,282 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
Price details
Prices listed do not include VAT.
| Quantity | Unit Price |
|---|