BUK768R3-60E
Standard threshold voltage FETBUK768R3-60E
Standard threshold voltage FET
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Manufacturer Part # : BUK768R3-60E
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Package/Case: D2PAK-3
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Brand: NXP Semiconductors
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
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BUK768R3-60E DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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BUK768R3-60E Description
The BUK768R3-60E is a high voltage N-channel power MOSFET from Nexperia, designed for reliable power management in various applications. This device features a maximum drain current of 4.5A and an operating voltage of 60V, making it suitable for demanding industrial and automotive applications.
Features
- High Power N-channel MOSFET: Designed for high-power switching applications.
- Designed for Automotive Applications: Suitable for demanding automotive environments.
- Maximum Drain Current of 4.5A: Provides reliable power management in various applications.
- Low On-state Resistance of 6.5mΩ: Minimizes energy losses and heat generation.
- Operating Voltage of 60V: Suitable for a wide range of industrial and automotive applications.
- TO-220 Package Type: Compact and efficient package design.
Applications
The BUK768R3-60E is commonly used in systems that require reliable power management, such as motor control, power management, electronic braking systems, industrial automation, and high-power switching applications.
Where to Use:
- Motor control
- Power management
- Electronic braking systems
- Industrial automation
- High-power switching applications
Manufacturer
The BUK768R3-60E is manufactured by Nexperia, a global leader in semiconductor technology. It falls under the category of discrete semiconductor products, specifically single FETs and MOSFETs.
Packages
The BUK768R3-60E comes in a TO-220 package type, making it suitable for compact circuit designs.
FAQ
Q: What is the maximum drain current of the BUK768R3-60E?
A: It has a maximum drain current of 4.5A, making it suitable for demanding industrial and automotive applications.
Q: How does the BUK768R3-60E handle high-power switching applications?
A: It features a high power N-channel MOSFET with low on-state resistance of 6.5mΩ, making it suitable for high-power switching applications.
Q: Can the BUK768R3-60E be used in automotive communication systems?
A: Yes, it is designed to be used in automotive communication systems and provides reliable power management in demanding environments.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature ! | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 86 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 75 A |
Drain-source On Resistance-Max | 0.0083 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 245 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 349 A |
Reference Standard | AEC-Q101; IEC-60134 | Surface Mount ! | YES |
Terminal Finish | TIN | Terminal Form ! | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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