BTS412A

Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
5,341 Effective Inventory

BTS412A

Effective Inventory5,341

Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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BTS412A DataSheet
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BTS412A Description

The BTS412A is a high-performance power field-effect transistor from Infineon Technologies AG, designed for reliable switching and amplification applications in industrial control systems. This device features a 0.4ohm on-resistance, making it suitable for demanding power management tasks.

Pin Details

The BTS412A is a N-channel power MOSFET with 1-element construction, offering high current handling and low voltage drop. It has the following pin configuration:

  • Pin 1 (Source): Source terminal
  • Pin 2 (Drain): Drain terminal
  • Pin 3 (Gate): Gate terminal
  • Pin 4 (VCC): Positive power supply
  • Pin 5 (GND): Ground

Features

  • High Current Handling: Capable of handling high currents up to 20A, making it suitable for demanding power management applications.
  • Low Voltage Drop: Offers a low voltage drop of 0.4ohm, reducing energy losses and increasing overall system efficiency.
  • Robust Construction: Features a robust construction with high reliability and durability in harsh environments.

Applications

The BTS412A is commonly used in industrial control systems, power supplies, motor drives, and other applications where high current handling and low voltage drop are required.

Where to Use:

  • Industrial control systems
  • Power supplies
  • Motor drives
  • Aerospace and defense applications

Manufacturer

The BTS412A is manufactured by Infineon Technologies AG, a leading provider of semiconductor solutions for the automotive, industrial, and consumer markets.

Packages

The BTS412A comes in an SO-8 package, making it suitable for surface-mount technology (SMT) applications.

Equivalent Parts of BTS412A

  • FQP50N06L: A comparable power MOSFET from Fairchild Semiconductor with similar features and performance.
  • IRF540N: An alternative power MOSFET from International Rectifier that offers equivalent functionality.

FAQ

Q: What is the maximum current handling of the BTS412A?
A: The BTS412A can handle up to 20A of current, making it suitable for demanding power management applications.

Q: How does the BTS412A compare to other power MOSFETs in terms of voltage drop?
A: The BTS412A offers a low voltage drop of 0.4ohm, which is comparable to or even lower than that of other power MOSFETs on the market.

Q: Can the BTS412A be used in aerospace and defense applications?
A: Yes, the BTS412A is suitable for use in aerospace and defense applications due to its high reliability, durability, and robust construction.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSFM-T5
Number of Elements 1 Number of Terminals 5
Operating Mode ! ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BTS412A PDF Download

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