BTS130

Power Field-Effect Transistor, 27A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
4,846 Effective Inventory

BTS130

Effective Inventory4,846

Power Field-Effect Transistor, 27A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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BTS130 DataSheet
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BTS130 Description

The BTS130 is a TEMPFET Transistor, N-CHAN, TO-220AB from Infineon Technologies AG, designed for reliable power management in various applications. This device features high current handling, low thermal resistance, and a compact package, making it suitable for use in industrial control systems, automotive electronics, and other demanding environments.

Pin Details

The BTS130 is a TEMPFET transistor with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (VCC): Positive Power Supply
  • Pin 2 (GND): Ground
  • Pin 3 (IN): Input Signal
  • Pin 4 (OUT): Output Signal
  • Pin 5 (EN): Enable Signal
  • Pin 6 (VCC): Positive Power Supply
  • Pin 7 (GND): Ground
  • Pin 8 (CASE): Case Connection

Features

  • High Current Handling: Capable of handling high currents, making it suitable for demanding applications.
  • Low Thermal Resistance: Designed to minimize thermal resistance and ensure reliable operation in harsh environments.
  • Compact Package: Housed in a compact TO-220AB package, ideal for use in space-constrained designs.

Applications

The BTS130 is commonly used in industrial control systems, automotive electronics, and other applications where reliable power management is critical.

Where to Use:

  • Industrial control systems
  • Automotive electronics
  • Power supplies
  • Motor control systems
  • Other demanding applications

Manufacturer

The BTS130 is manufactured by Infineon Technologies AG, a global leader in semiconductor technology. It falls under the category of TEMPFET transistors, which are designed to provide reliable power management in various applications.

Packages

The BTS130 comes in a compact TO-220AB package, making it suitable for use in space-constrained designs.

Equivalent Parts of BTS130

  • BTS140: A comparable TEMPFET transistor from Infineon Technologies AG with similar features and performance.
  • BTS150: An alternative TEMPFET transistor from another manufacturer that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Transferred
ECCN Code EAR99 HTS Code ! 8541.29.00.95
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 50 V Drain Current-Max (Abs) (ID) 27 A
Drain Current-Max (ID) 27 A Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 270 pF
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 108 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form ! THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 225 ns Turn-on Time-Max (ton) 130 ns

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BTS130 PDF Download

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