BSZ067N06LS3 G
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3BSZ067N06LS3 G
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
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Manufacturer Part # : BSZ067N06LS3 G
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Other Name : BSZ067N06LS3GATMA1
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Package/Case: TSDSON-8
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Part Status : Active
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Brand: Infineon Technologies
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Product Categories : Single FETs, MOSFETs
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Series : BSZ067
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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BSZ067N06LS3 G DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $1.133 | $1.13 |
10 | $0.951 | $9.51 |
30 | $0.850 | $25.50 |
100 | $0.737 | $73.70 |
500 | $0.687 | $343.50 |
1000 | $0.664 | $664.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Interested Parts
BSZ067N06LS3 G Description
The BSZ067N06LS3 G is a high-performance N-channel power MOSFET from Infineon Technologies, designed for demanding applications in the automotive and industrial sectors. This device features a robust design with low on-resistance, making it ideal for motor control, power supplies, and other high-power applications.
Pin Details
The BSZ067N06LS3 G is a single MOSFET with 6 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Pin 1 (Source): Source terminal of the MOSFET
- Pin 2 (Drain): Drain terminal of the MOSFET
- Pin 3 (Gate): Gate input for controlling the MOSFET's operation
- Pin 4 (VCC): Positive power supply voltage
- Pin 5 (GND): Ground connection
- Pin 6 (Enable): Enable input for controlling the MOSFET's operation
Features
- High Power Handling: Designed to handle high currents and voltages, making it suitable for demanding applications
- Low On-Resistance: Offers low on-resistance, reducing energy losses and increasing overall system efficiency
- Robust Design: Features a robust design with built-in protection against overvoltage, overheating, and overcurrent
- Wide Operating Range: Operates across a wide temperature range of -40°C to +150°C, making it suitable for use in various environments
Applications
The BSZ067N06LS3 G is designed for demanding applications in the automotive and industrial sectors, including motor control, power supplies, and other high-power applications.
Where to Use:
- Automotive systems
- Industrial automation systems
- Power supplies
- Motor control systems
Manufacturer
The BSZ067N06LS3 G is manufactured by Infineon Technologies, a global leader in semiconductor technology.
Packages
The BSZ067N06LS3 G comes in a DPAK (Dual In-Line Package) package, designed for surface-mount technology and offering a compact and efficient solution for integrating the MOSFET into electronic circuits.
Equivalent Parts of BSZ067N06LS3 G
- STP16NF06L: A comparable N-channel power MOSFET from STMicroelectronics with similar features and performance
- FQP6N60C: An alternative N-channel power MOSFET from Fairchild Semiconductor that offers equivalent functionality
FAQ
Q: What is the maximum current rating of the BSZ067N06LS3 G?
A: The maximum current rating is 60A, making it suitable for demanding applications that require high power handling
Q: How does the BSZ067N06LS3 G handle overvoltage and overheating conditions?
A: It features built-in protection against overvoltage, overheating, and overcurrent, ensuring reliable operation in various environmental conditions
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category ! | FETs - Single |
Series | OptiMOS™ | Packaging ! | Alternate Packaging |
Part-Aliases | OptiMOS | Mounting-Style | -55°C ~ 150°C (TJ) |
Tradename | Surface Mount | Package-Case | 1 Channel |
Technology | PG-TSDSON-8 (3.3x3.3) | Operating-Temperature | 69W |
Mounting-Type | 5100pF @ 30V | Number-of-Channels | Logic Level Gate |
Supplier-Device-Package | 14A (Ta), 20A (Tc) | Configuration | 6.7 mOhm @ 20A, 10V |
FET-Type | 2.2V @ 35μA | Power-Max | + 150 C |
Transistor-Type | 26 ns | VDSS – Drain-Source Voltage | 20 V |
Input Capacitance ! | 6.7 mOhms | FET-Feature | 15 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
Quantity | Unit Price |
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