BLF7G22L-130N

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
5,608 Effective Inventory

BLF7G22L-130N

Effective Inventory5,608

TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power

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Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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BLF7G22L-130N DataSheet
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BLF7G22L-130N Description

The BLF7G22L-130N is a high-performance RF power transistor from NXP Semiconductors, designed for demanding applications in the semiconductor industry. This device features a robust design and low noise figure, making it ideal for use in amplifiers, modulators, and other RF systems.

Pin Details

The BLF7G22L-130N is a 2-pin transistor with a ceramic package, featuring pins for the input and output signals. The pin configuration includes:

  • Pin 1 (IN): Input signal
  • Pin 2 (OUT): Output signal

Features

  • High Power Handling: Designed to handle high power levels, making it suitable for demanding applications.
  • Low Noise Figure: Features a low noise figure, ensuring reliable performance in noisy environments.
  • Robust Design: Boasts a robust design, providing excellent reliability and durability.

Applications

The BLF7G22L-130N is commonly used in RF amplifiers, modulators, and other systems where high power handling and low noise figure are essential.

Where to Use:

  • Radar systems
  • Satellite communication systems
  • Wireless communication networks
  • Aerospace applications

Manufacturer

The BLF7G22L-130N is manufactured by NXP Semiconductors, a leading global provider of semiconductor solutions.

Packages

The BLF7G22L-130N comes in a ceramic package, making it suitable for use in a variety of applications where high reliability and durability are essential.

Equivalent Parts of BLF7G22L-130N

  • BFP750V12: A comparable RF power transistor from NXP Semiconductors with similar features and performance.

FAQ

Q: What is the maximum power handling of the BLF7G22L-130N?
A: The maximum power handling is 130W, making it suitable for demanding applications.

Q: How does the BLF7G22L-130N handle noise in its input signal?
A: It features a low noise figure, ensuring reliable performance even in noisy environments.

BLF7G22L-130N

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Transferred Pin Count ! 2
ECCN Code EAR99 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 28 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND JESD-30 Code R-CDFM-F2
Number of Elements 1 Number of Terminals 2
Operating Mode ! ENHANCEMENT MODE Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Form ! FLAT
Terminal Position DUAL Transistor Application AMPLIFIER
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BLF7G22L-130N PDF Download

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