BLF277

Name: BLF277
Brand: Philips
Rating: 4.5 (10 reviews)
Author: Lisleapex

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

4,965 Effective Inventory

BLF277

Effective Inventory4,965

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Manufacturer Part # : BLF277
Package/Case: SOT
Brand: Philips
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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BLF277 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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BLF277 Description

The BLF277 is a high-performance power field-effect transistor (FET) from NXP Semiconductors, designed for reliable and efficient power management in various applications. This device features a metal-oxide semiconductor FET structure, offering low noise, high gain, and fast switching times.

Pin Details

The BLF277 is a discrete power FET with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

Pin 1 (GND): Ground
Pin 2 (VCC): Positive Power Supply
Pin 3 (A): Non-inverting Receiver Input/Driver Output
Pin 4 (B): Inverting Receiver Input/Driver Output
Pin 5 (RO): Receiver Output
Pin 6 (RE): Receiver Output Enable
Pin 7 (DE): Driver Output Enable
Pin 8 (DI): Driver Input

Features

High Performance: Offers low noise, high gain, and fast switching times for efficient power management.
Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, allowing it to function reliably in various environmental conditions.

Applications

The BLF277 is commonly used in power management applications where high performance, low noise, and efficient switching are essential, such as industrial control systems, automotive electronics, and renewable energy systems.

Where to Use:

Industrial control systems
Automotive electronics
Renewable energy systems
Battery-powered devices
Energy-efficient systems

Manufacturer

The BLF277 is manufactured by NXP Semiconductors, a global leader in semiconductor technology. It falls under the category of power FETs, which are designed to facilitate efficient and reliable power management in various applications.

Packages

The BLF277 is available in a variety of packages, including DPAK, TO-220, and SOIC, allowing for easy integration into various systems and designs.

Equivalent Parts of BLF277

BLS280: A comparable power FET from NXP Semiconductors with similar features and performance.
FQP50N06L: An alternative power FET from Fairchild Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code	Transferred	ECCN Code	EAR99
Configuration	Single	Drain Current-Max (Abs) (ID)	16 A
FET Technology	METAL-OXIDE SEMICONDUCTOR	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	200 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	220 W	Surface Mount !	NO

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BLF277 PDF Download