BF1211

Effective Inventory6,450

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal

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Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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BF1211 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Rapid Quote

Please submit RFQ for BF1211 or email to us: Email: [email protected], we will contact you in 12 hours.

BF1211 Description

The BF1211 is a N-channel dual-gate MOSFET from NXP, designed for high-frequency switching applications in power electronic circuits. This device features low gate-to-source capacitance and high current gain, making it suitable for compact circuit designs.

Pin Details

The BF1211 is a surface-mountable N-channel dual-gate MOSFET with 4 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (G): Gate
  • Pin 2 (D): Drain
  • Pin 3 (S): Source
  • Pin 4 (VCC): Positive Power Supply

Features

  • N-channel Dual-Gate MOSFET: Offers high-frequency switching capabilities and low gate-to-source capacitance.
  • Low Gate-to-Source Capacitance: Enables fast switching times and reduced power consumption.
  • High Current Gain: Provides efficient current amplification for compact circuit designs.

Applications

The BF1211 is commonly used in high-frequency switching applications, such as power electronic circuits, motor control systems, and audio equipment.

Where to Use:

  • Power electronic circuits
  • Motor control systems
  • Audio equipment

Manufacturer

The BF1211 is manufactured by NXP, a global leader in semiconductor technology. It falls under the category of MOSFETs, which are designed to facilitate efficient power switching and amplification.

Packages

The BF1211 comes in an SOT13B-4 package, making it suitable for surface-mount technology and compact circuit designs.

Equivalent Parts of BF1211

  • BF1206: A comparable N-channel dual-gate MOSFET from NXP with similar features and performance.
  • IRF510: An alternative power MOSFET from International Rectifier that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Pin Count ! 4
ECCN Code EAR99 Additional Feature ! LOW NOISE
Case Connection SOURCE Configuration COMPLEX
DS Breakdown Voltage-Min 6 V Drain Current-Max (Abs) (ID) 0.03 A
Drain Current-Max (ID) 0.03 A FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.03 pF Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Number of Elements 2 Number of Terminals 4
Operating Mode ! DUAL GATE, ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.18 W Qualification Status ! Not Qualified
Surface Mount ! YES Terminal Finish TIN
Terminal Form ! GULL WING Terminal Position DUAL
Transistor Application AMPLIFIER Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BF1211 PDF Download

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