BC57E687C-GITB-E4

Cutting-edge Bluetooth 2.1 + EDR Chip
7,626 Effective Inventory

BC57E687C-GITB-E4

Effective Inventory7,626

Cutting-edge Bluetooth 2.1 + EDR Chip

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BC57E687C-GITB-E4 DataSheet
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BC57E687C-GITB-E4 Details

The BC57E687C-GITB-E4 is a complementary NPN transistor from ON Semiconductor, designed for low power amplification and switching applications. It features low saturation voltage, high current gain, and is housed in a compact SOT-223 package. This transistor is ideal for use in consumer electronics and portable devices requiring efficient performance and reliability.

Pinout

  • 1 (C): Collector
  • 2 (B): Base
  • 3 (E): Emitter

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low Saturation Voltage: Ensures efficient performance in low-power applications.
  • High Current Gain: Provides high amplification for improved signal integrity.
  • Compact Package: SOT-223 package allows for efficient use of PCB space.
  • Versatile Applications: Suitable for a wide range of general-purpose electronic applications.
  • Reliable Operation: Designed for consistent performance over a wide operating range.

Application

  • Signal Amplification: Ideal for low-signal amplification in various electronic devices.
  • Switching Applications: Suitable for switching circuits in consumer electronics.
  • Power Management: Used in power management circuits to enhance performance.

Where to Use

The BC57E687C-GITB-E4 is suitable for applications that require efficient amplification and switching. It is commonly used in consumer electronics, power supplies, and various low-power applications to ensure optimal performance and reliability.

How to Use

Connect the BC57E687C-GITB-E4 into your circuit by wiring the Collector, Base, and Emitter pins according to your design. Ensure that the base voltage is sufficient to bias the transistor for desired operation. For detailed usage instructions and considerations, refer to the datasheet.

Application Circuit

The application circuit diagram for the BC57E687C-GITB-E4 demonstrates how to connect the transistor within various circuits for amplification and switching. It includes necessary biasing and load connections for optimal operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • BC547: A similar NPN transistor offering comparable specifications and performance.
  • 2N3904: An alternative NPN transistor suitable for general-purpose applications.

Complementary

The BC57E687C-GITB-E4 can be complemented by the BC56E687C-GITB-E4, a complementary PNP transistor offering similar features, making it ideal for push-pull configurations in amplifiers or switching circuits.

When selecting complementary transistors, ensure their specifications match your application requirements for optimal performance.

Frequently Asked Questions

Q: What is the maximum collector current for the BC57E687C-GITB-E4?

A: The BC57E687C-GITB-E4 can handle collector currents up to 800mA. For specific operating conditions and ratings, please refer to the datasheet.

Q: Can the BC57E687C-GITB-E4 be used in high-frequency applications?

A: While the BC57E687C-GITB-E4 is suitable for general-purpose applications, for high-frequency applications, it is recommended to refer to the specifications and consider a transistor specifically designed for high-speed performance.

BC57E687C-GITB-E4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! Qualcomm Brand RF360

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