BAS170WE6327HTSA1

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Silicon Schottky Diodes and Rectifiers

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BAS170WE6327HTSA1 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
5 $0.117 $0.58
50 $0.094 $4.70
150 $0.083 $12.45
500 $0.075 $37.50
3000 $0.068 $204.00
6000 $0.065 $390.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Rapid Quote

Please submit RFQ for BAS170WE6327HTSA1 or email to us: Email: [email protected], we will contact you in 12 hours.

BAS170WE6327HTSA1 Details

The BAS170WE6327HTSA1 is a high-speed switching diode from Infineon Technologies, designed for fast switching applications in electronic circuits. This diode features low capacitance and low forward voltage, making it ideal for high-frequency and high-speed signal processing. It is packaged in a small and efficient design, suitable for compact circuit layouts.

Pinout

  • 1 (Cathode): Cathode Terminal
  • 2 (Anode): Anode Terminal

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High-Speed Switching: Designed for fast switching applications.
  • Low Capacitance: Offers low capacitance for high-frequency signal processing.
  • Low Forward Voltage: Provides low forward voltage drop for efficient operation.
  • Compact Design: Housed in a small package for space-saving layouts.
  • High Efficiency: Ensures high efficiency in signal processing circuits.

Application

  • Signal Processing: Ideal for high-speed signal processing applications.
  • Schottky Barrier Diode: Used as a Schottky barrier diode for rectification and switching.
  • RF Circuits: Suitable for high-frequency RF circuits requiring fast switching.

Where to Use

The BAS170WE6327HTSA1 is suitable for applications where high-speed switching and low forward voltage are essential. It is commonly used in signal processing circuits, rectification tasks, and RF applications that demand efficient and fast diode operation.

How to Use

Connect the BAS170WE6327HTSA1 in your circuit by ensuring the cathode and anode terminals are correctly connected. Utilize this diode for fast switching tasks and high-frequency signal processing. Refer to the datasheet for specific operating conditions and application guidelines.

Application Circuit

The application circuit diagram for the BAS170WE6327HTSA1 demonstrates how to integrate the diode into your electronic system. Proper connections and layout considerations can enhance the performance of your circuit.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • 1N4148: A similar high-speed switching diode with equivalent characteristics.
  • BAT54S: An alternative Schottky barrier diode for fast switching applications.

Complementary

The BAS170WE6327HTSA1 can be complemented by the BAS316LT1G, offering additional features such as lower capacitance and higher efficiency for specific applications requiring enhanced performance.

When selecting complementary diodes, ensure compatibility and performance alignment with the requirements of your circuit design.

Frequently Asked Questions

Q: What is the maximum forward voltage of the BAS170WE6327HTSA1?

A: The BAS170WE6327HTSA1 has a low forward voltage characteristic for efficient operation. Refer to the datasheet for specific voltage values under different operating conditions.

Q: Can the BAS170WE6327HTSA1 be used in RF circuits?

A: Yes, the BAS170WE6327HTSA1 is suitable for RF circuits requiring high-speed switching and low capacitance diodes for optimal performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo el.std. - - 1*3k
msl 1 halogenFree no
customerInfo STANDARD fgr 228
productClassification COM productStatusInfo active and preferred
hfgr S packageName SOD323
pbFree yes moistureProtPack NON DRY
fourBlockPackageName PG-SOD323-2-1 rohsCompliant yes
opn BAS170WE6327HTSA1 completelyPbFree yes
sapMatnrSali SP000010216

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification BAS170WE6327HTSA1 PDF Download

FAQs

What is BAS170WE6327HTSA1?

The BAS170WE6327HTSA1 is a high-speed switching diode designed by Infineon Technologies. It is ideal for applications requiring fast switching and low forward voltage drop, such as high-frequency rectification and signal demodulation.

How Does BAS170WE6327HTSA1 Work?

The BAS170WE6327HTSA1 works by efficiently conducting current in one direction while blocking current flow in the reverse direction. Its high-speed characteristics make it suitable for rapid switching applications, while its low forward voltage drop minimizes power dissipation.

How Many Pins does BAS170WE6327HTSA1 have and What are the Functions of the Pinout Configuration?

The BAS170WE6327HTSA1 is a surface-mount device (SMD) and is packaged in a SOD-323 package. It has two pins: the anode and the cathode, which are used to connect the diode in a circuit for forward conduction.

What are the Pros and Cons of BAS170WE6327HTSA1?

Pros:

  • High-Speed Switching: Ideal for fast switching applications.
  • Low Forward Voltage Drop: Helps minimize power loss.
  • Compact Package: The SOD-323 package is space-efficient and suitable for compact designs.
  • Surface-Mount Design: Allows for automated assembly processes in manufacturing.

Cons:

  • Low Reverse Voltage: May not be suitable for high reverse voltage applications.
  • Single Application: Designed specifically for high-speed switching, may not be versatile for other use cases.

Are There Any Equivalents/Alternatives to BAS170WE6327HTSA1 for Recommendation?

Equivalent parts to the BAS170WE6327HTSA1 include the BAV170 and BAS116LT1G, both from ON Semiconductor. Alternatives include the 1N4148 from Vishay and the 1N5819 from Diodes Incorporated.

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