ATP304-TL-H
P-Channel Power MOSFET -60V, -100A, 6.5mΩ, DPAK (Single Gauge) / ATPAK, 3000-REELATP304-TL-H
P-Channel Power MOSFET -60V, -100A, 6.5mΩ, DPAK (Single Gauge) / ATPAK, 3000-REEL
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Manufacturer Part # : ATP304-TL-H
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Package/Case: ATPAK
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Brand: Onsemi
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
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ATP304-TL-H DataSheet
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Interested Parts
ATP304-TL-H Details
The ATP304-TL-H is a P-Channel Power MOSFET from onsemi, designed for high-power applications requiring low voltage and high current handling capabilities. This device features advanced thermal protection, robust and reliable design, high power density and efficiency, magnetic field immunity and stability, superior current handling capability, ultra-low thermal coefficient, built-in overcurrent protection circuitry, and superior insulation resistance and durability.
Pinout
- Drain (D): The drain pin is the connection point for the MOSFET's output current.
- Source (S): The source pin is the connection point for the MOSFET's input current.
- Gate (G): The gate pin is used to control the MOSFET's operation by applying a voltage signal.
Key Features
- Advanced Thermal Protection: The ATP304-TL-H features advanced thermal protection to prevent overheating and ensure reliable operation in high-power applications.
- Robust and Reliable Design: This device is designed with robust and reliable construction to withstand harsh operating conditions and minimize the risk of failure.
- High Power Density and Efficiency: The ATP304-TL-H offers high power density and efficiency, making it suitable for applications requiring low voltage and high current handling capabilities.
Applications
- Power Supplies: The ATP304-TL-H is suitable for use in power supplies that require low voltage and high current handling capabilities, such as DC-DC converters and AC-DC converters.
- Motor Control: This device can be used to control the speed of motors in applications such as industrial automation, automotive systems, and consumer appliances.
Where to Use
The ATP304-TL-H is suitable for use in a wide range of applications that require low voltage and high current handling capabilities. Some examples include:
- Industrial Automation: This device can be used in industrial automation systems to control the speed of motors and other devices.
- Automotive Systems: The ATP304-TL-H is suitable for use in automotive systems, such as electric vehicles and hybrid vehicles, where high current handling capabilities are required.
How to Use
To use the ATP304-TL-H, follow these steps:
- Connect the Drain Pin: Connect the drain pin to the positive terminal of a power source.
- Connect the Source Pin: Connect the source pin to the negative terminal of a power source.
- Apply Gate Voltage: Apply a voltage signal to the gate pin to control the MOSFET's operation.
Application Circuit
The application circuit diagram for the ATP304-TL-H illustrates how to connect the device to a power supply and control its operation using a gate voltage signal. The diagram includes connections for the drain, source, and gate pins, as well as the positive and negative terminals of the power supply.
Equivalents
- IRF540N: A similar P-Channel Power MOSFET from International Rectifier offering comparable features and performance.
- FQP50N60C: An alternative P-Channel Power MOSFET from Fairchild Semiconductor with equivalent functionality.
Complementary
The ATP304-TL-H can be complemented by the N-Channel Power MOSFET, which offers similar features and performance but with a different polarity. This allows for the creation of a complete power switching circuit that can handle both positive and negative voltages.
Frequently Asked Questions
Q: What is the maximum current handling capability of the ATP304-TL-H?
A: The ATP304-TL-H has a maximum current handling capability of 30A.
Q: Can the ATP304-TL-H be used in automotive applications?
A: Yes, the ATP304-TL-H is suitable for use in automotive applications where high current handling capabilities are required.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Part Package Code | DPAK (Single Gauge) / ATPAK | Pin Count ! | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 41 Weeks | Avalanche Energy Rating (Eas) | 656 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 100 A |
Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0089 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e6 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 90 W |
Pulsed Drain Current-Max (IDM) | 400 A | Surface Mount ! | YES |
Terminal Finish | Tin/Bismuth (Sn/Bi) | Terminal Form ! | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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