AM29F040B-55EF
The AM29F040B-55EF is a high-performance flash memory chip suitable for various applications requiring quick data accessAM29F040B-55EF
The AM29F040B-55EF is a high-performance flash memory chip suitable for various applications requiring quick data access
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AM29F040B-55EF DataSheet
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AM29F040B-55EF Details
The AM29F040B-55EF is a 4-megabit (512 K x 8-bit) CMOS 5.0 Volt-only, uniform sector flash memory device from Advanced Micro Devices (AMD). It offers high-speed programming and erasing operations, making it suitable for a wide range of applications requiring non-volatile memory storage. This flash memory chip is designed for reliability and durability in various electronic systems.
Pinout
- 1 (A0-A18): Address Inputs
- 2 (/CE): Chip Enable
- 3 (/OE): Output Enable
- 4 (/WE): Write Enable
- 5 (VCC): Power Supply
- 6 (DQ0-DQ7): Data Inputs/Outputs
- 7 (RP): Reset/Deep Power-down
- 8 (NC): No Connect
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- High-Speed Operation: Enables rapid programming and erasing of data.
- 5.0V Power Supply: Requires only a 5.0V power supply for operation.
- Uniform Sector Architecture: Organized into uniform sectors for efficient data storage.
- CMOS Technology: Utilizes CMOS technology for low power consumption.
- Durable Construction: Designed for reliable performance and longevity.
Application
- Embedded Systems: Ideal for storing firmware and configuration data in embedded systems.
- Industrial Automation: Used in industrial automation equipment requiring non-volatile memory.
- Consumer Electronics: Suitable for consumer electronic devices for firmware storage.
Where to Use
The AM29F040B-55EF is well-suited for applications that demand reliable, high-speed, and non-volatile memory storage. It is commonly used in embedded systems, industrial automation, and consumer electronics where data persistence and fast access times are crucial.
How to Use
Integrate the AM29F040B-55EF into your system by connecting the address, control, and data lines according to the datasheet specifications. Ensure proper power supply connections and follow the recommended programming and erasing procedures for data manipulation. For detailed usage instructions, refer to the datasheet.
Application Circuit
The application circuit diagram for the AM29F040B-55EF shows how to connect the flash memory device to a microcontroller or system bus. It includes connections for address lines, control signals, data lines, and power supply, ensuring reliable data storage and retrieval.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- AT49F040: A similar flash memory device with comparable features and performance.
- W27C040: An alternative non-volatile memory chip offering equivalent functionality.
Complementary
The AM29F040B-55EF can be paired with the AM29F016B-75EF to increase memory capacity and provide additional storage options for larger data sets. The complementary combination offers expanded memory capabilities for extensive data storage requirements.
When combining flash memory devices, verify compatibility and interface requirements to ensure seamless integration and optimal performance.
Frequently Asked Questions
Q: What is the erase time of the AM29F040B-55EF?
A: The erase time of the AM29F040B-55EF is typically X seconds. Refer to the datasheet for precise timing specifications and operational details.
Q: Can the AM29F040B-55EF be used in automotive applications?
A: Yes, the AM29F040B-55EF can be utilized in automotive systems requiring reliable non-volatile memory storage. Ensure proper environmental considerations and operating conditions are met for automotive use.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | NOR Flash | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | TSOP-32 |
Series | AM29F040B | Memory Size ! | 4 Mbit |
Supply Voltage - Min | 4.75 V | Supply Voltage - Max | 5.25 V |
Active Read Current - Max | 30 mA | Interface Type | Parallel |
Organization | 512 k x 8 | Data Bus Width | 8 bit |
Timing Type | Asynchronous | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature ! | + 85 C | Architecture | Sector |
Brand | Infineon Technologies | Memory Type ! | NOR |
Moisture Sensitive | Yes | Product Type ! | NOR Flash |
Speed | 55 ns | Factory Pack Quantity | 156 |
Subcategory | Memory & Data Storage |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is AM29F040B-55EF?
The AM29F040B-55EF is a 4-megabit (512K x 8-bit) CMOS flash memory device manufactured by AMD (now part of Cypress Semiconductor). It is commonly used in embedded systems, consumer electronics, and industrial applications that require non-volatile memory storage.
How Does AM29F040B-55EF Work?
The AM29F040B-55EF operates as a non-volatile memory device that stores data even when power is removed. It uses a floating gate transistor technology to store digital information in memory cells. The device supports both random and sequential access for reading and programming data.
How Many Pins does AM29F040B-55EF have and What are the Functions of the Pinout Configuration?
The AM29F040B-55EF is housed in a 32-pin PDIP (Plastic Dual In-Line Package). The pinout configuration includes:
- A0-A19: Address Inputs.
- DQ0-DQ7: Data Input/Output Pins.
- CE: Chip Enable for device selection.
- OE: Output Enable for data output control.
- WE: Write Enable for data programming.
- RP: Ready/Busy Status Output.
- VCC, VSS: Power Supply and Ground Pins.
- ACC, BYTE: Access and Byte Enable Pins.
What are the Pros and Cons of AM29F040B-55EF?
Pros:
- High Density: Offers 4-megabit storage capacity for data-intensive applications.
- Non-Volatile: Retains data even without power, suitable for storage applications.
- Fast Access Time: Provides quick read and write operations for efficient data handling.
- Durable: CMOS technology ensures reliability and longevity.
- Industry Standard: Widely used and supported in the embedded systems industry.
Cons:
- Programming Voltage: Requires specific programming voltages for write operations.
- Restricted Endurance: Limited number of erase/write cycles compared to some newer memory technologies.
- Obsolete: Being an older technology, it may not offer the latest features found in newer flash memory devices.
Are There Any Equivalents/Alternatives to AM29F040B-55EF for Recommendation?
- The SST39SF040 from Microchip is a similar 4-megabit flash memory device.
- Alternative flash memory options include the W25Q32 from Winbond and the AT49BV040 from Atmel (now Microchip).
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Price details
Prices listed do not include VAT.
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