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7MBR35VM120-50
Three-phase IGBT Power Integrated Module, 35A, 1200V, V Series7MBR35VM120-50
Three-phase IGBT Power Integrated Module, 35A, 1200V, V Series
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Manufacturer Part # : 7MBR35VM120-50
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Package/Case: Module
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Brand: Fujitsu Limited
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Product Categories : Single IGBTs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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7MBR35VM120-50 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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7MBR35VM120-50 Description
The 7MBR35VM120-50 is a high-performance insulated gate bipolar transistor (IGBT) from Fuji Electric Co Ltd, designed for robust and efficient power conversion in industrial applications. This device features a high current rating of 35A I(C), a blocking voltage of 1200V V(BR)CES, and an N-channel configuration, making it suitable for demanding power electronic systems.
Pin Details
The 7MBR35VM120-50 is a compact IGBT with 5 pins for easy integration into electronic circuits. It includes pins for the collector, emitter, base, and two additional connections for gate and collector-emitter voltage sensing.
Pin configuration
- P1 (C): Collector
- P2 (E): Emitter
- P3 (B): Base
- P4 (G): Gate
- P5 (VCE): Collector-Emitter Voltage Sensing
Features
- High Current Rating: Handles up to 35A of current, making it suitable for demanding power electronic applications.
- High Blocking Voltage: Withstands a blocking voltage of 1200V V(BR)CES, ensuring reliable operation in high-voltage systems.
- N-Channel Configuration: Designed with an N-channel configuration for efficient power conversion and reduced switching losses.
- Compact Package: Housed in a compact package, making it ideal for space-constrained applications.
Applications
The 7MBR35VM120-50 is commonly used in industrial power electronic systems that require high current handling and efficient power conversion, such as motor drives, power supplies, and renewable energy systems.
Where to Use:
- Industrial power electronic systems
- Motor drives
- Power supplies
- Renewable energy systems
Manufacturer
The 7MBR35VM120-50 is manufactured by Fuji Electric Co Ltd, a leading global provider of power electronics and electrical components.
Packages
The 7MBR35VM120-50 is available in a compact package suitable for surface-mount technology (SMT) applications.
Equivalent Parts of 7MBR35VM120-50
- Fuji Electric's 7MBR30VM100: A comparable IGBT with similar features and performance, but with a lower current rating.
- Infineon's IPW65R035C5: An alternative IGBT from Infineon Technologies that offers equivalent functionality and performance.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Pin Count ! | 23 | ECCN Code | EAR99 |
| Case Connection | ISOLATED | Collector Current-Max (IC) | 35 A |
| Collector-Emitter Voltage-Max | 1200 V | Configuration | COMPLEX |
| Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X21 |
| Number of Elements | 7 | Number of Terminals | 21 |
| Operating Temperature-Max | 125 °C | Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 210 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | UNSPECIFIED |
| Terminal Position | UPPER | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 530 ns | Turn-on Time-Nom (ton) | 390 ns |
| VCEsat-Max | 2.6 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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