7MBR100VP060-50

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Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-32

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Service & Packaging

Service & Packaging

About After Sales Service

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7MBR100VP060-50 DataSheet

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7MBR100VP060-50 Description

The 7MBR100VP060-50 is an IGBT module featuring a voltage rating of 600V, a current rating of 100A, and a compact design suitable for high-power applications.

Pin Details

The 7MBR100VP060-50 is a power module commonly used in industrial and commercial applications. It includes built-in protection features such as overcurrent and overvoltage protection, making it reliable in demanding environments.

Features

  • High Power Density: Offers high current and voltage ratings for efficient power conversion.
  • Robust Protection: Includes built-in overcurrent and overvoltage protection to prevent damage from unexpected surges or spikes.
  • Compact Design: Features a compact design suitable for use in space-constrained applications.

Applications

The 7MBR100VP060-50 is commonly used in industrial and commercial applications that require high-power conversion, such as motor drives, power supplies, and inverters.

Where to Use:

  • Industrial automation systems
  • Commercial power supply systems
  • Motor drive applications
  • Inverters and converters

Manufacturer

The 7MBR100VP060-50 is manufactured by Fuji Electric Co Ltd, a global leader in the development of high-reliability power electronics.

Packages

The 7MBR100VP060-50 comes in an industry-standard package suitable for surface-mount technology and through-hole mounting options.

Equivalent Parts of 7MBR100VP060-50

  • Fuji Electric: The 7MBR100VP060-50 is equivalent to other Fuji Electric IGBT modules with similar ratings and features.
7MBR100VP060-50

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Pin Count ! 32 ECCN Code EAR99
Case Connection ISOLATED Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V JESD-30 Code R-XUFM-X21
Number of Elements 7 Number of Terminals 21
Operating Temperature-Max 125 °C Package Body Material UNSPECIFIED
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 430 W Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! UNSPECIFIED
Terminal Position UPPER Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns Turn-on Time-Nom (ton) 360 ns
VCEsat-Max 2.65 V

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 7MBR100VP060-50 PDF Download

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