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6MBI450V-120-50
Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-296MBI450V-120-50
Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-29
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Manufacturer Part # : 6MBI450V-120-50
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Package/Case: M629
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Brand: Fujitsu Limited
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Product Categories : Single IGBTs
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Service & Packaging
Service & Packaging
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6MBI450V-120-50 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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6MBI450V-120-50 Description
The 6MBI450V-120-50 is an IGBT MOD.DIODE SIX 450A 1200V V SERIES E9PACK from FUJI ELECTRIC, designed for reliable power transmission in various applications. This device features high current handling and voltage tolerance, making it suitable for demanding industrial environments.
Features
- High Current Handling: Designed to handle high currents up to 450A, making it suitable for demanding industrial applications.
- Voltage Tolerance: Features a voltage tolerance of 1200V, ensuring reliable operation in various environments.
Applications
The 6MBI450V-120-50 is commonly used in power transmission systems that require high current handling and voltage tolerance, such as industrial automation, renewable energy, and electric vehicle charging applications.
Where to Use:
- Industrial automation systems
- Renewable energy systems
- Electric vehicle charging infrastructure
Manufacturer
The 6MBI450V-120-50 is manufactured by FUJI ELECTRIC, a global leader in semiconductor technology and power electronics. It falls under the category of IGBT modules, which are designed to provide reliable and efficient power transmission in various applications.
This product was developed to meet the growing demand for high-power transmission solutions in industrial, renewable energy, and electric vehicle charging applications, where features like high current handling and voltage tolerance are essential.
Packages
The 6MBI450V-120-50 comes in an E9PACK package, which is designed to provide a compact and efficient solution for integrating the IGBT module into electronic circuits.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Part Package Code | MODULE |
| Pin Count ! | 29 | ECCN Code | EAR99 |
| Case Connection | ISOLATED | Collector Current-Max (IC) | 450 A |
| Collector-Emitter Voltage-Max | 1200 V | Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-Emitter Voltage-Max | 20 V | JESD-30 Code | R-XUFM-X29 |
| Number of Elements | 6 | Number of Terminals | 29 |
| Operating Temperature-Max | 150 °C | Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2250 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | UNSPECIFIED |
| Terminal Position | UPPER | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 1050 ns | Turn-on Time-Nom (ton) | 550 ns |
| VCEsat-Max | 2.2 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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