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6MBI15GS-060
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, SIP-11
6MBI15GS-060
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, SIP-11
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Manufacturer Part # : 6MBI15GS-060
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Package/Case: M619
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Brand: Fujitsu Limited
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Product Categories : Single IGBTs
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Service & Packaging
Service & Packaging
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6MBI15GS-060 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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6MBI15GS-060 Description
The 6MBI15GS-060 is an Insulated Gate Bipolar Transistor from FUJI ELECTRIC, designed for reliable performance in various applications. This device features high current handling and voltage capabilities, making it suitable for a wide range of industrial and commercial uses.
Features
- I(C) = 15A: Offers high current handling for demanding applications.
- V(BR)CES = 600V: Provides reliable performance under high voltage conditions.
- N-Channel: Designed for use in N-channel applications.
Application
The 6MBI15GS-060 is commonly used in industrial and commercial applications where high current handling and voltage capabilities are required, such as power supplies, motor control systems, and lighting systems.
Where to Use:
- Industrial automation systems
- Commercial power supply systems
- Motor control systems
- Lighting systems
Manufacturer
The 6MBI15GS-060 is manufactured by FUJI ELECTRIC, a global leader in semiconductor technology. It falls under the category of Insulated Gate Bipolar Transistors (IGBTs), which are designed to provide reliable and efficient power conversion.
Packages
The 6MBI15GS-060 comes in an SIP-11 package, making it suitable for compact circuit designs.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Pin Count ! | 11 |
| ECCN Code | EAR99 | Case Connection | ISOLATED |
| Collector Current-Max (IC) | 15 A | Collector-Emitter Voltage-Max | 600 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | Gate-Emitter Voltage-Max | 20 V |
| JESD-30 Code | R-XSFM-P11 | Number of Elements | 6 |
| Number of Terminals | 11 | Operating Temperature-Max | 150 °C |
| Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | PIN/PEG |
| Terminal Position | SINGLE | Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON | VCEsat-Max | 2.8 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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