2SK955

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Power Field-Effect Transistor with a current rating of 5A, voltage capability of 800V, and resistance of 2 ohms

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Service & Packaging

Service & Packaging

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All Parts Extended Quality Guarantee

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2SK955 DataSheet

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2SK955 Description

The 2SK955 is a high-performance N-channel power MOSFET from Fuji Electric Co Ltd, designed for reliable and efficient switching in various applications. This device features advanced N-channel power MOSFET design, fast switching speed for high-frequency apps, limited input capacitance reduces noise, and excellent thermal stability guaranteed.

Pin Details

The 2SK955 is a power MOSFET with 4 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (GND): Ground
  • Pin 2 (VCC): Positive Power Supply
  • Pin 3 (DRAIN): Drain
  • Pin 4 (SOURCE): Source

Features

  • Advanced N-channel power MOSFET design: Ensures reliable and efficient switching in various applications.
  • Fast switching speed for high-frequency apps: Enables high-speed communication and data transfer.
  • Limited input capacitance reduces noise: Minimizes electromagnetic interference (EMI) and radio-frequency interference (RFI).
  • Excellent thermal stability guaranteed: Ensures reliable operation in various temperature ranges.

Applications

The 2SK955 is commonly used in systems that require high-speed switching, efficient power management, and reliable communication, such as industrial automation, automotive electronics, and consumer appliances.

Where to Use:

  • Industrial automation systems
  • Automotive electronics
  • Consumer appliances
  • Power supplies
  • Motor control systems

Manufacturer

The 2SK955 is manufactured by Fuji Electric Co Ltd, a global leader in semiconductor technology. It falls under the category of power MOSFETs, which are designed to facilitate efficient and reliable switching in various applications.

Packages

The 2SK955 comes in an SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the power MOSFET into electronic circuits.

Equivalent Parts of 2SK955

  • STP16NF06: A comparable N-channel power MOSFET from STMicroelectronics with similar features and performance.
  • FQP6N60C: An alternative N-channel power MOSFET from Fairchild Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3 ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 5 A Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 20 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SK955 PDF Download

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