2SK790
Trans MOSFET 2SK790 is a N-type Silicon transistor with a maximum voltage capacity of 500V and a current rating of 15A in a TO-3P package2SK790
Trans MOSFET 2SK790 is a N-type Silicon transistor with a maximum voltage capacity of 500V and a current rating of 15A in a TO-3P package
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Manufacturer Part # : 2SK790
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Package/Case: TO-3P
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Brand: Toshiba
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Product Categories : Single FETs, MOSFETs
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Service & Packaging
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2SK790 DataSheet
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Interested Parts
2SK790 Description
The 2SK790 is a low noise RF transistor suitable for high frequency applications such as RF amplifiers and oscillators.
Pin Details
The 2SK790 is a power MOSFET transistor with 8 pins, featuring maximum voltage of 900V and maximum current of 15A. It has a low on-resistance of 2.5 ohms, making it suitable for high-power applications.
Pin configuration
- (Package): TO-3P-3
Features
- High Power Handling: The 2SK790 has a maximum voltage of 900V and maximum current of 15A, making it suitable for high-power applications.
- Low On-Resistance: It has a low on-resistance of 2.5 ohms, reducing power loss and increasing efficiency.
- Low Capacitance: The transistor has low capacitance, making it ideal for use in switching power supplies and motor control circuits.
- High Switching Speed: It has a high switching speed, allowing for fast and efficient switching operations.
Application
The 2SK790 is suitable for applications that require high voltage ratings, such as power amplifiers, switching power supplies, motor controls, and voltage regulators.
Where to Use:
- Power amplifiers
- Switching power supplies
- Motor control circuits
- Voltage regulators
- Audio amplifiers
- LED drivers
Manufacturer
The 2SK790 is manufactured by Toshiba America Electronic Components, a leading manufacturer of discrete semiconductor products.
This product was developed to meet the growing demand for high-power and low-noise transistors in various applications, including power amplifiers, switching power supplies, and motor control circuits.
Packages
The 2SK790 comes in a TO-3P-3 package, making it suitable for compact circuit designs.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
ECCN (US) | EAR99 | Part Status ! | Obsolete |
Automotive | No | PPAP | No |
Category | Power MOSFET | Material | Si |
Process Technology | pi-MOS I | Configuration | Single |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Continuous Drain Current (A) | 15 |
Maximum Drain Source Resistance (mOhm) | 400@10V | Typical Gate Charge @ Vgs (nC) | 87@10V |
Typical Gate Charge @ 10V (nC) | 87 | Typical Input Capacitance @ Vds (pF) | 2300@10V |
Maximum Power Dissipation (mW) | 150000 | Typical Fall Time (ns) | 75 |
Typical Rise Time (ns) | 70 | Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 | Mounting | Through Hole |
Package Height | 5.2 | Package Width | 26 |
Package Length | 20.5 | PCB changed | 3 |
Tab | Tab | Standard Package Name | TO |
Supplier Package | TO-3P | Pin Count ! | 3 |
Lead Shape | Through Hole |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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