2SK3475

Name: 2SK3475
Brand: Toshiba
Rating: 4.5 (10 reviews)
Author: Lisleapex

Channel Transistor

6,796 Effective Inventory

2SK3475

Effective Inventory6,796

Channel Transistor

Manufacturer Part # : 2SK3475
Package/Case: SOT-89
Brand: Toshiba
Product Categories : Memory

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About After Sales Service

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Initiate the application within 90 days from the shipment date.

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2SK3475 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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2SK3475 Details

The 2SK3475 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power supply circuits, motor control, and other power electronics applications. It is produced by Renesas Electronics Corporation, a leading semiconductor manufacturer.The 2SK3475 features a drain-source voltage (Vds) rating of 500V and a continuous drain current (Id) rating of 2.5A, making it suitable for medium-power applications. It has a low on-state resistance (Rds(on)) of 5.5 ohms, which helps minimize power losses and improve efficiency in switching circuits.The device is housed in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink. It can operate over a wide temperature range, from -55°C to 150°C, making it suitable for industrial and automotive applications.The 2SK3475 has built-in protection features such as overcurrent and overtemperature protection, which help prevent damage to the device under fault conditions. It also has a fast switching speed and low gate charge, allowing for efficient and reliable operation in high-frequency switching applications.

Key Features

N-channel MOSFET
Low on-resistance
High voltage capability
Low input capacitance
High speed switching
Suitable for high frequency applications
Low gate charge
RoHS compliant

Application

Switching and amplification in audio equipment
Signal processing in telecommunication systems
Power management in automotive electronics
Industrial control systems
RF amplification in wireless communication devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	Yes	Part Life Cycle Code	Not Recommended
Part Package Code	SC-62	Pin Count !	3
Reach Compliance Code		ECCN Code	EAR99
Configuration	SINGLE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (Abs) (ID)	1 A	Drain Current-Max (ID)	1 A
FET Technology	METAL-OXIDE SEMICONDUCTOR	Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
JESD-30 Code	R-PSSO-F3	Number of Elements	1
Number of Terminals	3	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	3 W	Power Gain-Min (Gp)	14.9 dB
Qualification Status !	Not Qualified	Surface Mount !	YES
Terminal Form !	FLAT	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SK3475 PDF Download

FAQs

What is 2SK3475?

The 2SK3475 is a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed, high-voltage switching applications. It is commonly used in power supply, motor control, and audio amplifier circuits where high-performance switching is required.

How Does 2SK3475 Work?

The 2SK3475 operates by controlling the flow of current between the drain and source terminals using an electric field. By varying the voltage on the gate terminal, the MOSFET can modulate the conductivity between the drain and source, making it suitable for high-speed switching applications.

How Many Pins does 2SK3475 have and What are the Functions of the Pinout Configuration?

The 2SK3475 is housed in a TO-220 package. The pinout configuration includes:

G: Gate terminal for controlling the MOSFET conductivity.
D: Drain terminal for the output current.
S: Source terminal for the input or ground connection.

What are the Pros and Cons of 2SK3475?

Pros:

High-Speed Switching: Suitable for applications requiring rapid on/off switching.
High-Voltage Capability: Designed to handle high voltage levels, making it suitable for power electronics.
Low On-Resistance: Enables efficient current flow when the MOSFET is in the conducting state.
Simple Drive Circuitry: The gate input is voltage-controlled, requiring minimal drive circuit complexity.

Cons:

Gate Drive Voltage: Requires precise gate drive voltage control for optimal performance.
Heat Dissipation: May require heatsinking to manage thermal dissipation at high currents.
Threshold Voltage Variation: MOSFETs can exhibit threshold voltage variations between devices, requiring careful matching in some applications.

Are There Any Equivalents/Alternatives to 2SK3475 for Recommendation?

Equivalents to the 2SK3475 include the IRF740 and IRF840 MOSFETs from Infineon Technologies. Alternatives to the 2SK3475 include the FQP30N06L and FDP7030L MOSFETs from Fairchild Semiconductor.